Titre :

Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers

Auteur(s) :

Marinova, Maya [Auteur]
Department of Physics [Thessaloniki]
Andreadou, Ariadne [Auteur]
Department of Physics [Thessaloniki]
Sun, Jian Wu [Auteur]
Groupe d'étude des semiconducteurs [GES]
Lorenzzi, Jean [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Mantzari, Alkyoni [Auteur]
Department of Physics [Thessaloniki]
Zoulis, Georgios [Auteur]
Groupe d'étude des semiconducteurs [GES]
Jegenyes, Nikoletta [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Juillaguet, Sandrine [Auteur]
Groupe d'étude des semiconducteurs [GES]
Soulière, Véronique [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Ferro, Gabriel [Auteur]
Laboratoire des Multimatériaux et Interfaces [LMI]
Camassel, Jean [Auteur]
Groupe d'étude des semiconducteurs [GES]
Polychroniadis, Efstathios K. [Auteur]
Department of Physics [Thessaloniki]

Titre de la revue :

Materials Science Forum

Numéro :

679-680

Pagination :

241-244

Date de publication :

2011

Discipline(s) HAL :

Chimie/Matériaux

Résumé en anglais : [en]

The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off ...
Lire la suite >The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.Lire moins >

Langue :

Anglais

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Autres travaux scientifiques

Date de dépôt :

2019-06-17T08:43:27Z
2020-03-18T15:15:58Z