Titre :

Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

Auteur(s) :

Robert, Teddy [Auteur]
Groupe d'étude des semiconducteurs [GES]
Marinova, Maya [Auteur]
Department of Physics [Thessaloniki]
Juillaguet, Sandrine [Auteur]
Groupe d'étude des semiconducteurs [GES]
Henry, Anne [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Polychroniadis, Efstathios K. [Auteur]
Department of Physics [Thessaloniki]
Camassel, Jean [Auteur]
Groupe d'étude des semiconducteurs [GES]

Titre de la revue :

Materials Science Forum

Numéro :

679-680

Pagination :

314-317

Date de publication :

2011

Discipline(s) HAL :

Chimie

Résumé en anglais : [en]

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of ...
Lire la suite >Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.Lire moins >

Langue :

Anglais

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Autres travaux scientifiques

Date de dépôt :

2019-06-17T08:43:28Z
2020-03-13T14:27:28Z