Titre :

The Influence of the Temperature Gradient on the Defect Structure of 3C-SiC Grown Heteroepitaxially on 6H-SiC by Sublimation Epitaxy

Auteur(s) :

Marinova, Maya [Auteur]
Department of Physics [Thessaloniki]
Mantzari, Alkyoni [Auteur]
Department of Physics [Thessaloniki]
Beshkova, Milena [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Syväjärvi, Mikael [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Yakimova, Rositza [Auteur]
Department of Physics, Chemistry and Biology [Linköping] [IFM]
Polychroniadis, Efstathios K. [Auteur]
Department of Physics [Thessaloniki]

Titre de la revue :

Materials Science Forum

Numéro :

645-648

Pagination :

367-370

Date de publication :

2010

Discipline(s) HAL :

Chimie/Matériaux

Résumé en anglais : [en]

In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC ...
Lire la suite >In the present work the structural quality of 3C-SiC layers grown by sublimation epitaxy is studied by means of conventional and high resolution transmission electron microscopy. The layers were grown on Si-face 6H-SiC nominally on-axis substrates at a temperature of 2000°C and different temperature gradients, ranging from 5 to 8 °C /mm. The influence of the temperature gradient on the structural quality of the layers is discussed. The formation of specific twin complexes and conditions for lower stacking fault density are investigated.Lire moins >

Langue :

Anglais

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Autres travaux scientifiques

Date de dépôt :

2019-06-17T08:43:29Z
2020-03-18T15:31:36Z