Van der Waals epitaxial growth of few ...
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Article dans une revue scientifique: Article original
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Title :
Van der Waals epitaxial growth of few layers WSe2 on GaP(111)B
Author(s) :
Chapuis, Niels [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mahmoudi, Aymen [Auteur]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Troadec, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vignaud, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Patriarche, Gilles [Auteur]
Roussel, Pascal [Auteur]
Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181
Ouerghi, Abdelkarim [Auteur]
Oehler, Fabrice [Auteur]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mahmoudi, Aymen [Auteur]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Troadec, David [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vignaud, Dominique [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Patriarche, Gilles [Auteur]
Roussel, Pascal [Auteur]

Unité de Catalyse et Chimie du Solide (UCCS) - UMR 8181
Ouerghi, Abdelkarim [Auteur]
Oehler, Fabrice [Auteur]
Wallart, Xavier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
2D Materials
Abbreviated title :
2D Mater.
Volume number :
11
Pages :
035031
Publisher :
IOP Publishing
Publication date :
2024-06-06
ISSN :
2053-1583
English keyword(s) :
2D materials
molecular beam epitaxy
Van der Waals epitaxy
2D on 3D heterostructure
WSe2
x-ray photoelectron spectroscopy
molecular beam epitaxy
Van der Waals epitaxy
2D on 3D heterostructure
WSe2
x-ray photoelectron spectroscopy
HAL domain(s) :
Sciences de l'ingénieur [physics]
Physique [physics]
Chimie/Chimie inorganique
Physique [physics]
Chimie/Chimie inorganique
English abstract : [en]
2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe2 on GaP(111)B ...
Show more >2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe2 on GaP(111)B by molecular beam epitaxy. Using a combination of experimental techniques, we emphasize the role of the growth temperature and of a subsequent annealing of the grown layers under a selenium flux on the polytype formed and on its structural and morphological properties. We show that a low growth temperature promotes the formation of the 1T' and 3R phases depending on the layer thickness whereas a higher growth temperature favours the stable 2H phase. The resulting layers exhibit clear epitaxial relationships with the GaP(111)B substrate with an optimum grain disorientation and mean size of 1.1° and around 30 nm respectively for the 2H phase. Bilayer 2H WSe2/GaP(111)B heterostructures exhibit a staggered type II band alignment and p-doped character of the epi-layer on both p and n-type GaP substrates. This first realisation of stable p-type WSe2 epi-layer on a large-area GaP(111)B substrate paves the way to new 2D/3D heterostructures with great interests in nanoelectronic and optoelectronic applications, especially in the development of new 2D-material p-n junctions.Show less >
Show more >2D material epitaxy offers the promise of new 2D/2D and 2D/3D heterostructures with their own specific electronic and optical properties. In this work, we demonstrate the epitaxial growth of few layers WSe2 on GaP(111)B by molecular beam epitaxy. Using a combination of experimental techniques, we emphasize the role of the growth temperature and of a subsequent annealing of the grown layers under a selenium flux on the polytype formed and on its structural and morphological properties. We show that a low growth temperature promotes the formation of the 1T' and 3R phases depending on the layer thickness whereas a higher growth temperature favours the stable 2H phase. The resulting layers exhibit clear epitaxial relationships with the GaP(111)B substrate with an optimum grain disorientation and mean size of 1.1° and around 30 nm respectively for the 2H phase. Bilayer 2H WSe2/GaP(111)B heterostructures exhibit a staggered type II band alignment and p-doped character of the epi-layer on both p and n-type GaP substrates. This first realisation of stable p-type WSe2 epi-layer on a large-area GaP(111)B substrate paves the way to new 2D/3D heterostructures with great interests in nanoelectronic and optoelectronic applications, especially in the development of new 2D-material p-n junctions.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Administrative institution(s) :
Université de Lille
CNRS
Centrale Lille
ENSCL
Univ. Artois
CNRS
Centrale Lille
ENSCL
Univ. Artois
Collections :
Research team(s) :
Matériaux inorganiques, structures, systèmes et propriétés (MISSP)
EPIPHY (Epitaxie et Physique des hétérostructures)
EPIPHY (Epitaxie et Physique des hétérostructures)
Submission date :
2024-07-12T21:06:22Z
2024-08-22T11:33:34Z
2024-08-22T11:33:34Z