InAlGaN-based HEMT with very low Ohmic ...
Document type :
Article dans une revue scientifique: Article original
DOI :
Title :
InAlGaN-based HEMT with very low Ohmic contact resistance regrown at 850 °C by MOVPE
Author(s) :
Pitaval, Charles [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Alcatel-Thales III-V Lab [III-V Lab]
Aroulanda, Sébastien [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fouzi, Yassine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Defrance, Nicolas [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lacam, Cédric [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Michel, Nicolas [Auteur]
Laboratoire d'Informatique Gaspard-Monge [LIGM]
ESIEE Paris
El Bondry, Nadia [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Oualli, Mourad [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Teisseire, Laurent [Auteur]
Jacquet, Jean-Claude [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Piotrowicz, Stéphane [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Laboratoire d'informatique de l'École polytechnique [Palaiseau] [LIX]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Delage, Sylvain [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Alcatel-Thales III-V Lab [III-V Lab]
Aroulanda, Sébastien [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fouzi, Yassine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Defrance, Nicolas [Auteur]

Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lacam, Cédric [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Michel, Nicolas [Auteur]
Laboratoire d'Informatique Gaspard-Monge [LIGM]
ESIEE Paris
El Bondry, Nadia [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Oualli, Mourad [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Teisseire, Laurent [Auteur]
Jacquet, Jean-Claude [Auteur]
Alcatel-Thales III-V Lab [III-V Lab ]
Piotrowicz, Stéphane [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Laboratoire d'informatique de l'École polytechnique [Palaiseau] [LIX]
Gaquiere, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Delage, Sylvain [Auteur]
Alcatel-Thales III-V Lab [III-V Lab]
Journal title :
Applied Physics Letters
Publisher :
American Institute of Physics
Publication date :
2024-07-01
ISSN :
0003-6951
English keyword(s) :
Contact impedance
Transconductance
Electrical properties and parameters
Field effect transistors
Ohmic contacts
Electric measurements
Materials properties
Doping
Semiconductors
Transconductance
Electrical properties and parameters
Field effect transistors
Ohmic contacts
Electric measurements
Materials properties
Doping
Semiconductors
HAL domain(s) :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
Regrown Ohmic contacts have been widely studied for high millimeter-wave applications. However, few were applied to InAl(Ga)N-based HEMT despite the lattice match benefits with GaN channel because of the poor thermal ...
Show more >Regrown Ohmic contacts have been widely studied for high millimeter-wave applications. However, few were applied to InAl(Ga)N-based HEMT despite the lattice match benefits with GaN channel because of the poor thermal stability of the quaternary barrier. In this article, we use relatively low temperature (850 °C) MOVPE technique for the regrowth of heavily Si doped GaN (1 × 1020 cm−3) to avoid deterioration of the channel's electrical characteristics. Moreover, high selectivity of the regrowth is obtained, thanks to large opening ratio of the hard mask. The state-of-the-art total Ohmic contact resistance Rc = 0.06 Ω mm is reached with high homogeneity on a 4-in. wafer. This result reflects the combined contribution of the doped GaN interfaces with both the metal contact and the channel. 2 × 50 μm transistors featuring 100 nm gate length with regrown Ohmic contacts present remarkable improvements of DC and RF performances. At 40 GHz, the highest Power Added Efficiency (PAE) of 54% is attained at an output power of 3.8 W mm−1, while the maximum output power of 9.4 W mm−1 is achieved at a PAE of 48%, corresponding to bias voltages of 15 and 30 V, respectively.Show less >
Show more >Regrown Ohmic contacts have been widely studied for high millimeter-wave applications. However, few were applied to InAl(Ga)N-based HEMT despite the lattice match benefits with GaN channel because of the poor thermal stability of the quaternary barrier. In this article, we use relatively low temperature (850 °C) MOVPE technique for the regrowth of heavily Si doped GaN (1 × 1020 cm−3) to avoid deterioration of the channel's electrical characteristics. Moreover, high selectivity of the regrowth is obtained, thanks to large opening ratio of the hard mask. The state-of-the-art total Ohmic contact resistance Rc = 0.06 Ω mm is reached with high homogeneity on a 4-in. wafer. This result reflects the combined contribution of the doped GaN interfaces with both the metal contact and the channel. 2 × 50 μm transistors featuring 100 nm gate length with regrown Ohmic contacts present remarkable improvements of DC and RF performances. At 40 GHz, the highest Power Added Efficiency (PAE) of 54% is attained at an output power of 3.8 W mm−1, while the maximum output power of 9.4 W mm−1 is achieved at a PAE of 48%, corresponding to bias voltages of 15 and 30 V, respectively.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :