Title :

Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories

Author(s) :

Tang, Xiaohui [Auteur correspondant]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Krzeminski, Christophe [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Lecavelier Des Etangs-Levallois, Aurelien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chen, Zhenkun [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kasper, Erich [Auteur]
Karmous, Alim [Auteur]
Reckinger, Nicolas [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Flandre, Denis [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Francis, Laurent A. [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Collinge, Jean-Pierre [Auteur]
Raskin, Jean-Pierre [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]

Journal title :

Nano Letters

Pages :

4520-4526

Publisher :

American Chemical Society

Publication date :

2011

ISSN :

1530-6984

English keyword(s) :

Double floating-gate single-electron memory
heterostructure
quantum effects
conduction-band offset

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by ...
Show more >We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2024-09-19T02:28:01Z