Energy-band engineering for improved charge ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
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Title :
Energy-band engineering for improved charge retention in fully self-aligned double floating-gate single-electron memories
Author(s) :
Tang, Xiaohui [Auteur correspondant]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Krzeminski, Christophe [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Lecavelier Des Etangs-Levallois, Aurelien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chen, Zhenkun [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kasper, Erich [Auteur]
Karmous, Alim [Auteur]
Reckinger, Nicolas [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Flandre, Denis [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Francis, Laurent A. [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Collinge, Jean-Pierre [Auteur]
Raskin, Jean-Pierre [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Krzeminski, Christophe [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Lecavelier Des Etangs-Levallois, Aurelien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chen, Zhenkun [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kasper, Erich [Auteur]
Karmous, Alim [Auteur]
Reckinger, Nicolas [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Flandre, Denis [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Francis, Laurent A. [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Collinge, Jean-Pierre [Auteur]
Raskin, Jean-Pierre [Auteur]
Institute of Information and Communication Technologies, Electronics and Applied Mathematics [ICTEAM]
Journal title :
Nano Letters
Pages :
4520-4526
Publisher :
American Chemical Society
Publication date :
2011
ISSN :
1530-6984
English keyword(s) :
Double floating-gate single-electron memory
heterostructure
quantum effects
conduction-band offset
heterostructure
quantum effects
conduction-band offset
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by ...
Show more >We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.Show less >
Show more >We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by the conduction-band offset that arises between Ge and Si. The dimension and position of each floating gate are well defined and controlled. The devices exhibit a long retention time and single-electron injection at room temperature.Show less >
Language :
Anglais
Popular science :
Non
Source :
Submission date :
2024-09-19T02:28:01Z
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