Title :

Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

Author(s) :

Medjdoub, Farid [Auteur]
Shinohara, Keisuke [Auteur]
Thome, Fabian [Auteur]
Moon, Jeong-Sun [Auteur]
Chumbes, Eduardo [Auteur]
Guidry, Matthew [Auteur]
Mishra, Umesh [Auteur]
Zanoni, Enrico [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghini, Matteo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghesso, Gaudenzio [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Pomeroy, James [Auteur]
Thingujam, Terirama [Auteur]
Kyungpook National University [Daegu] [KNU]
Kuball, Martin [Auteur]
University of Bristol [Bristol]

Journal title :

IEEE Microwave Magazine

Pages :

18-37

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2024-10

ISSN :

1527-3342

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-data-rate communications (e.g., 10 Gb/s or higher) and backhaul communications ...
Show more >Advanced millimeter-wave (mm-wave) transceiver systems, including future mm-wave 5G and 6G mobile networks, are of great interest to support high-data-rate communications (e.g., 10 Gb/s or higher) and backhaul communications with >50 Gb/s. Since the E band and beyond can also support multigigahertz bandwidths, there is also growing interest in phased-array implementations. With its inherent integration advantage, SiGe phased arrays were demonstrated at the W band [1] , with the latest result of a >10-Gb/s data rate [2] . In the case of point-to-point wireless links, III–V technologies [e.g., a pseudomorphic high-electron mobility transistor (pHEMT)] have also been utilized in full-duplex W-band links with a peak data rate of 10 Gb/s [2] .Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL