Titre :

Vertical GaN devices: Reliability challenges and lessons learned from Si and SiC

Auteur(s) :

Meneghini, M. [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Fregolent, M. [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
Zagni, N. [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
Hamadoui, Y. [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Marcuzzi, A. [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
Favero, D. [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
de Santi, C. [Auteur]
Buffolo, M. [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Tomasi, M. [Auteur]
Zappalà, G. [Auteur]
Dipartimento di Ingegneria dell'Informazione [Padova]
Bahat-Treidel, E. [Auteur]
Brusaterra, E. [Auteur]
Brunner, F. [Auteur]
CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) [CEA-DES (ex-DEN)]
Hilt, O. [Auteur]
Huber, C. [Auteur]
Brown University
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Meneghesso, G. [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Verzellesi, G. [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
Pavan, P. [Auteur]
Università degli Studi di Modena e Reggio Emilia = University of Modena and Reggio Emilia [UNIMORE]
Zanoni, E. [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]

Titre de la manifestation scientifique :

IEDM 2023 - 70th Annual IEEE International Electron Devices Meeting

Ville :

San Francisco

Pays :

Etats-Unis d'Amérique

Date de début de la manifestation scientifique :

2024-12-07

Titre de l’ouvrage :

Proceeding of IEDM 2024

Éditeur :

IEEE

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and ...
Lire la suite >We discuss recent advancements in the development of vertical GaN devices, and the related reliability challenges. Key results indicate that: (i) vertical GaN devices can show high performance, low background doping, and kV-range breakdown voltages; avalanche capability (a property of Si and SiC devices) is demonstrated also for vertical devices on silicon substrate, enabling reliable high-voltage operation; (ii) threshold voltage instabilities are related to the presence of interface and border traps, whose contribution can be modeled with great accuracy by prior characterization of the trap distribution profile; (iii) gate stack reliability is mainly limited by oxide breakdown; factors limiting off-state failure are discussed. Strategies for device improvement are proposed, also based on the learnings from silicon and silicon carbide technology.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet Européen :

Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL