Title :

Characterization of Schottky Diodes at Wafer Level for Frequency Multipliers Applications Based on RF Coplanar Measurements

Author(s) :

Bouillaud, Hugo [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Roelens, Yannick [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN - RFNET [PCMP - IEMN - RFNET]
Treuttel, Jeanne [Auteur]
LERMA Cergy [LERMA]
Mondal, Priyanka [Auteur]
Laboratoire d'Etude du Rayonnement et de la Matière en Astrophysique et Atmosphères = Laboratory for Studies of Radiation and Matter in Astrophysics and Atmospheres [LERMA]
Gellie, Pierre [Auteur]
Laboratoire Matériaux et Phénomènes Quantiques [MPQ (UMR_7162)]
Zaknoune, Mohammed [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]

Conference title :

2024 19th European Microwave Integrated Circuits Conference (EuMIC)

City :

Paris

Country :

France

Start date of the conference :

2024-09-23

Publisher :

IEEE

English keyword(s) :

On-wafer Schottky diodes
RF power generation and measurements

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

While Schottky diode for THz generation have been extensively studied over last decades, technological developments are still required to reach the physical limits of these devices, such as breakdown voltage or sub-μm ...
Show more >While Schottky diode for THz generation have been extensively studied over last decades, technological developments are still required to reach the physical limits of these devices, such as breakdown voltage or sub-μm devices, but also efficient thermal management in particular before their integration into waveguide packaging. We propose to investigate the DC/RF performances at device level without any integration/packaging encapsulation that require complex and time-consuming efforts. Thus, we report on initial characterization of on-wafer GaAs Schottky diodes, used as frequency doubler and pumped at 95 GHz.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL