High quality fully versus pseudo vertical GaN-on-Silicon pn diodes

Hamdaoui, Youssef; Abid, Idriss; Michler, Sondre; Ziouche, Katir; Medjdoub, Farid

Document type :

Communication dans un congrès avec actes

Permalink :

http://hdl.handle.net/20.500.12210/118368

Title :

High quality fully versus pseudo vertical GaN-on-Silicon pn diodes

Author(s) :

Hamdaoui, Youssef [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Michler, Sondre [Auteur]
Ziouche, Katir [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Conference title :

GaN Marathon

City :

VERONA

Country :

Italie

Start date of the conference :

2024-06-10

Book title :

Proceeding of GaN Marathon 2024

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report on high quality vertical GaN-on-silicon pn diodes. A successful scaling of the drift region thicknesses resulted in state-of-the-art breakdown voltage well above 1000 V (corresponding to a critical electric field ...
Show more >We report on high quality vertical GaN-on-silicon pn diodes. A successful scaling of the drift region thicknesses resulted in state-of-the-art breakdown voltage well above 1000 V (corresponding to a critical electric field of 2.3 MV/cm) together with low Ron (< 0.5 mΩ.cm²). Furthermore, a comparison between pseudo and fully vertical diodes fabricated on the same epi-wafer demonstrates the benefit of the fully vertical architecture when using larger device dimensions as needed to deliver high current. As a result, unprecedented low on-state resistance could be achieved in large mm-size diodes with avalanche breakdown capability. <div>I. INTRODUCTION<p>n the frame of the development of next generation low cost power devices, Gallium nitride (GaN) grown on Silicon (Si) is an undeniable technology that combines the high physical properties of GaN (large band gap, high electron mobility and high electric field) and the cost-effective Si fabrication technology. Lateral GaN-based high electron mobility transistors (HEMTs) on Si substrate are thus a promising candidate with proven high performances. However, several drawbacks slow down the industrialization of this technology for high voltage applications (> 650 V) such as a destructive breakdown voltage (BV), a complex epitaxy and large device size [1]. To overcome this limitation, the junction based vertical GaN-on-Silicon technology could be an attractive alternative. Indeed, the vertical structure allows a better electric field management potentially resulting in low charge trapping issues. Moreover, the BV occurs due to impact ionization, which results in a non-destructive breakdown and thus unlock the avalanche capability. Finally, owing to the vertical transport, the device size can be smaller compared to high voltage lateral architectures. Recently, pseudo vertical (PV) GaN-on-Si pn diodes have been developed with few attempts of fully vertical devices [2]. However, high current spreading in large devices has not been yet demonstrated, although this is a key requirement for power electronics. Current crowding effect in the case of pseudovertical devices is a major issue that prevents the achievement of large current (i.e. large device dimension with low onresistance). Therefore, the development of a robust fully vertical (FV) structure with high processing and growth quality is critical to unveil the potential of this technology.</p></div>Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

European Project :

Vertical GaN on Silicon: Wide Band Gap Power at Silicon Cost

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2024-11-05T04:31:57Z

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