Titre :

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

Auteur(s) :

García-Sánchez, S [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Pérez, S [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Íñiguez-De-La-Torre, I [Auteur]
Departamento de Fisica Aplicada [Salamanca]
García-Vasallo, B [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Huo, L [Auteur]
Nanyang Technological University [Singapour] [NTU]
Lingaparthi, R [Auteur]
Nanyang Technological University [Singapour] [NTU]
Nethaji, D [Auteur]
Nanyang Technological University [Singapour] [NTU]
Radhakrishnan, K [Auteur]
Nanyang Technological University [Singapour] [NTU]
Council of Scientific and Industrial Research [India] [CSIR]
Abou Daher, M [Auteur]
Lesecq, Marie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
González, T [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Mateos, J [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Daher, M. Abou [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Journal of Physics D: Applied Physics

Pagination :

015112

Éditeur :

IOP Publishing

Date de publication :

2024-10-14

ISSN :

0022-3727

Discipline(s) HAL :

Physique [physics]
Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Abstract Impact ionization originated by the buffer leakage current, together with high electric fields ( > 3 MV cm −1 ) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped ...
Lire la suite >Abstract Impact ionization originated by the buffer leakage current, together with high electric fields ( > 3 MV cm −1 ) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped planar GaN Gunn diodes when biased above 20 V, so that no evidence of Gunn oscillations in fabricated devices has been observed yet. In order to avoid the avalanche, we propose the addition of a Schottky substrate terminal, which, by means of Monte Carlo simulations, has been confirmed to be able to suppress such not-desired leakage current when applying a negative substrate bias. When the substrate bias is positive, impact ionization is also reduced due to the lower electric field at the hotspot, but a vertical cathode-substrate current degrades the device operation. In order to avoid such current, we propose the use a MIS configuration for the substrate contact, which is the optimal solution.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Date de dépôt :

2025-01-23T09:09:00Z