Title :

On the importance of Ni-Au-Ga interdiffusion in the formation of a Ni-Au / p-GaN ohmic contact

Author(s) :

Duraz, Jules [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Souissi, Hassen [Auteur]
Laboratoire Charles Coulomb [L2C]
Gromovyi, Maksym [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Troadec, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Baptiste, Teo [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Findling, Nathaniel [Auteur]
Vuong, Phuong [Auteur]
Georgia Institute of Technology [Lorraine, France]
Georgia Tech Lorraine [Metz]
Gujrati, Rajat [Auteur]
Georgia Tech Lorraine [Metz]
Tran, Thi May [Auteur]
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Tchernycheva, Maria [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Sundaram, Suresh [Auteur]
Georgia Institute of Technology [Lorraine, France]
Ougazzaden, Abdallah [Auteur]
School of Electrical and Computer Engineering - Georgia Insitute of Technology [ECE GeorgiaTech]
Georgia Institute of Technology [Lorraine, France]
Georgia Tech Lorraine [Metz]
Patriarche, Gilles [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]
Bouchoule, Sophie [Auteur]
Centre de Nanosciences et de Nanotechnologies [C2N]

Publication date :

2024-12-16

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled ...
Show more >The Ni-Au-Ga interdiffusion mechanisms taking place during rapid thermal annealing (RTA) under oxygen atmosphere of a Ni-Au/p-GaN contact are investigated by high-resolution transmission electron microscopy (HR-TEM) coupled to energy dispersive X-ray spectroscopy (EDX). It is shown that oxygen-assisted, Ni diffusion to the top surface of the metallic contact through the formation of a nickel oxide (NiOx) is accompanied by Au diffusion down to the GaN surface, and by Ga out-diffusion through the GaN/metal interface. Electrical characterizations of the contact by Transmission Line Method (TLM) show that an ohmic contact is obtained as soon as a thin, Au-Ga interfacial layer is formed, even after complete diffusion of Ni or NiOx to the top surface of the contact. Our results clarify that the presence of Ni or NiOx at the interface is not the main origin of the ohmic-like behavior in such contacts. Auto-cleaning of the interface during the interdiffusion process may play a role, but TEM-EDX analysis evidences that the creation of Ga vacancies associated to the formation of a Ga-Au interfacial layer is crucial for reducing the Schottky barrier height, and maximizing the amount of current flowing through the contact.Show less >

Language :

Anglais

ANR Project :

Nouveaux concepts pour micro- et nano-lasers à guide d'onde
Stimulateur optique d'implant de faible taille et haute densité à base de LEDs minces détachable

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2025-01-23T09:17:57Z