A Novel Theoretical Investigation of ...
Document type :
Article dans une revue scientifique
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Title :
A Novel Theoretical Investigation of Electronic Structure and Half-Metallic Ferromagnetism in 3d (V)-Doped InP for Spintronic Applications
Author(s) :
Cherfi, Yacine [Auteur]
Mokaddem, Allel [Auteur]
Bensaid, Djillali [Auteur]
Doumi, Bendouma [Auteur]
Sayede, Adlane [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Dahmane, Fethallah [Auteur]
Tadjer, Abdelkader [Auteur]
Mokaddem, Allel [Auteur]
Bensaid, Djillali [Auteur]
Doumi, Bendouma [Auteur]
Sayede, Adlane [Auteur]

Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Dahmane, Fethallah [Auteur]
Tadjer, Abdelkader [Auteur]
Journal title :
Journal of Superconductivity and Novel Magnetism
Volume number :
29
Pages :
1813-1819
Publication date :
2016-02-27
HAL domain(s) :
Chimie/Chimie inorganique
English abstract : [en]
We have investigated the electronic structure and half-metallic ferromagnetic properties of vanadium (V)-doped InP indium phosphide in the zinc blende structure as ternary In 1−x V x P compounds at concentrations x = 0.25, ...
Show more >We have investigated the electronic structure and half-metallic ferromagnetic properties of vanadium (V)-doped InP indium phosphide in the zinc blende structure as ternary In 1−x V x P compounds at concentrations x = 0.25, 0.5, and 0.75 of V, using first-principles calculations of density functional theory with generalized gradient approximation functional of Wu and Cohen (GGA-WC). It is found that In 0.75 V 0.25P, In 0.5 V 0.5P, and In 0.25 V 0.75P compounds depicted a half-metallic (HM) ferromagnetic character with spin polarization of 100 % at Fermi level. The HM ferromagnetic behavior is confirmed by the integral Bohr magneton of total magnetic moment of 2 μ B per V atom of In 1−x V x P, which mainly arises from the 3d (V) states along with less important contributions of induced local magnetic moments at In and P sites. Therefore, the In 1−x V x P material seems to be potential candidate for possible semiconductor spintronics applications.Show less >
Show more >We have investigated the electronic structure and half-metallic ferromagnetic properties of vanadium (V)-doped InP indium phosphide in the zinc blende structure as ternary In 1−x V x P compounds at concentrations x = 0.25, 0.5, and 0.75 of V, using first-principles calculations of density functional theory with generalized gradient approximation functional of Wu and Cohen (GGA-WC). It is found that In 0.75 V 0.25P, In 0.5 V 0.5P, and In 0.25 V 0.75P compounds depicted a half-metallic (HM) ferromagnetic character with spin polarization of 100 % at Fermi level. The HM ferromagnetic behavior is confirmed by the integral Bohr magneton of total magnetic moment of 2 μ B per V atom of In 1−x V x P, which mainly arises from the 3d (V) states along with less important contributions of induced local magnetic moments at In and P sites. Therefore, the In 1−x V x P material seems to be potential candidate for possible semiconductor spintronics applications.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Administrative institution(s) :
ENSCL
CNRS
Centrale Lille
Univ. Artois
Université de Lille
CNRS
Centrale Lille
Univ. Artois
Université de Lille
Collections :
Research team(s) :
Couches minces & nanomatériaux (CMNM)
Submission date :
2019-09-25T14:05:20Z