Ferroelectric and dielectric study of ...
Type de document :
Article dans une revue scientifique
URL permanente :
Titre :
Ferroelectric and dielectric study of strontium tantalum based perovskite oxynitride films deposited by reactive rf magnetron sputtering
Auteur(s) :
Le Paven, C. [Auteur]
Benzerga, R. [Auteur]
Ferri, Anthony [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Fasquelle, D. [Auteur]
Laur, V. [Auteur]
Le Gendre, L. [Auteur]
Marlec, Florent [Auteur]
Institut d'Electronique et de Télécommunications de Rennes [IETR]
Tessier, Franck [Auteur]
Cheviré, F. [Auteur]
Desfeux, Rachel [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Saitzek, Sebastien [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Castel, X. [Auteur]
Sharaiha, A. [Auteur]
Benzerga, R. [Auteur]
Ferri, Anthony [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Fasquelle, D. [Auteur]
Laur, V. [Auteur]
Le Gendre, L. [Auteur]
Marlec, Florent [Auteur]
Institut d'Electronique et de Télécommunications de Rennes [IETR]
Tessier, Franck [Auteur]
Cheviré, F. [Auteur]
Desfeux, Rachel [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Saitzek, Sebastien [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Castel, X. [Auteur]
Sharaiha, A. [Auteur]
Titre de la revue :
Materials Research Bulletin
Numéro :
96
Pagination :
126-132
Éditeur :
Elsevier
Date de publication :
2017-12
Discipline(s) HAL :
Chimie/Chimie inorganique
Résumé en anglais : [en]
Strontium and tantalum based oxynitride perovskite thin films were deposited by reactive magnetron sputtering. Epitaxial films deposited on Nb-SrTiO3 substrates show smooth surfaces with roughness values from 1.5 to 3.6 ...
Lire la suite >Strontium and tantalum based oxynitride perovskite thin films were deposited by reactive magnetron sputtering. Epitaxial films deposited on Nb-SrTiO3 substrates show smooth surfaces with roughness values from 1.5 to 3.6 nm for a thickness of films in the range 20–1600 nm. The samples are yellow with band gap values around 2.35 eV. Piezo-force microscopy characterization pointed out the local piezoelectric and ferroelectric behavior of the oxynitride perovskite films. In the low frequency range, the 1600 nm-thick film exhibits a permittivity of 175 at 10 kHz, with dielectric losses of 0.055. Permittivity is lowered in high frequencies with a value around 65 obtained on a 1520 nm-thick film deposited on MgO substrate, which is textured with a preferential c-axis orientation. No accordability of the permittivity was highlighted at a macroscopic scale. The moderate crystallographic strain evidenced in the 20 nm thin film does not induce a high permittivity.Lire moins >
Lire la suite >Strontium and tantalum based oxynitride perovskite thin films were deposited by reactive magnetron sputtering. Epitaxial films deposited on Nb-SrTiO3 substrates show smooth surfaces with roughness values from 1.5 to 3.6 nm for a thickness of films in the range 20–1600 nm. The samples are yellow with band gap values around 2.35 eV. Piezo-force microscopy characterization pointed out the local piezoelectric and ferroelectric behavior of the oxynitride perovskite films. In the low frequency range, the 1600 nm-thick film exhibits a permittivity of 175 at 10 kHz, with dielectric losses of 0.055. Permittivity is lowered in high frequencies with a value around 65 obtained on a 1520 nm-thick film deposited on MgO substrate, which is textured with a preferential c-axis orientation. No accordability of the permittivity was highlighted at a macroscopic scale. The moderate crystallographic strain evidenced in the 20 nm thin film does not induce a high permittivity.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Établissement(s) :
ENSCL
CNRS
Centrale Lille
Univ. Artois
Université de Lille
CNRS
Centrale Lille
Univ. Artois
Université de Lille
Collections :
Équipe(s) de recherche :
Couches minces & nanomatériaux (CMNM)
Date de dépôt :
2019-09-25T14:05:23Z
2021-03-29T11:38:44Z
2021-03-29T11:38:44Z
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