The Doping Effect on Ferromagnetic Arrangement ...
Document type :
Article dans une revue scientifique
Permalink :
Title :
The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities
Author(s) :
Boutaleb, Miloud [Auteur]
Doumi, Bendouma [Auteur]
Mokaddem, Allel [Auteur]
Sayede, Adlane [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Tadjer, Abdelkader [Auteur]
Doumi, Bendouma [Auteur]
Mokaddem, Allel [Auteur]
Sayede, Adlane [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Tadjer, Abdelkader [Auteur]
Journal title :
Journal of Superconductivity and Novel Magnetism
Volume number :
31
Pages :
2157-2163
Publication date :
2017-12-01
HAL domain(s) :
Chimie/Chimie inorganique
English abstract : [en]
The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties ...
Show more >The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties for spintronics applications. We have used the full-potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structures and magnetic properties of Al1−x TM x As at low concentration x = 0.0625 of transition metal (TM = V, Cr, and Mn) atoms. We have found that the majority-spin states of Al0.9375 TM 0.0625As compounds are metallic due to large p-d hybridization between 3d levels of TM and the 4p levels of As around Fermi level, whereas the minority-spin states have semiconductor character. These compounds exhibit a half-metallic behavior with spin polarization of 100%, where the ferromagnetism is originated from double-exchange mechanism. Therefore, Al0.9375 TM 0.0625As (TM = V, Cr, and Mn) materials seem to be good candidates for spin injection in the field of spintronics applications.Show less >
Show more >The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties for spintronics applications. We have used the full-potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structures and magnetic properties of Al1−x TM x As at low concentration x = 0.0625 of transition metal (TM = V, Cr, and Mn) atoms. We have found that the majority-spin states of Al0.9375 TM 0.0625As compounds are metallic due to large p-d hybridization between 3d levels of TM and the 4p levels of As around Fermi level, whereas the minority-spin states have semiconductor character. These compounds exhibit a half-metallic behavior with spin polarization of 100%, where the ferromagnetism is originated from double-exchange mechanism. Therefore, Al0.9375 TM 0.0625As (TM = V, Cr, and Mn) materials seem to be good candidates for spin injection in the field of spintronics applications.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Administrative institution(s) :
ENSCL
CNRS
Centrale Lille
Univ. Artois
Université de Lille
CNRS
Centrale Lille
Univ. Artois
Université de Lille
Collections :
Research team(s) :
Couches minces & nanomatériaux (CMNM)
Submission date :
2019-09-25T14:38:08Z