Evidence of two plastic regimes controlled ...
Document type :
Article dans une revue scientifique
DOI :
Permalink :
Title :
Evidence of two plastic regimes controlled by dislocation nucleation in silicon nanostructures
Author(s) :
Godet, Julien [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Hirel, Pierre [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Brochard, Sandrine [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Pizzagalli, Laurent [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Laboratoire de Physique des Matériaux [PhyMat]
Hirel, Pierre [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Brochard, Sandrine [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Pizzagalli, Laurent [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Journal title :
Journal of Applied Physics
Abbreviated title :
Journal of Applied Physics
Volume number :
105
Pages :
026104
Publisher :
AIP Publishing
Publication date :
2009-01-15
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
English abstract : [en]
We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending ...
Show more >We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending on the temperature and stress magnitude. At high temperature and low stress, partial dislocation loops are nucleated in the {111} glide set planes. But at low temperature and very high stress, perfect dislocation loops are formed in the other set of {111} planes called shuffle. This result confirmed by three different classical potentials suggests that plasticity in silicon nanostructures could be controlled by dislocation nucleation.Show less >
Show more >We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending on the temperature and stress magnitude. At high temperature and low stress, partial dislocation loops are nucleated in the {111} glide set planes. But at low temperature and very high stress, perfect dislocation loops are formed in the other set of {111} planes called shuffle. This result confirmed by three different classical potentials suggests that plasticity in silicon nanostructures could be controlled by dislocation nucleation.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
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Submission date :
2020-02-21T10:31:38Z
2020-03-17T15:18:40Z
2020-03-17T15:18:40Z