Title :

Evidence of two plastic regimes controlled by dislocation nucleation in silicon nanostructures

Author(s) :

Godet, Julien [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Hirel, Pierre [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Brochard, Sandrine [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]
Pizzagalli, Laurent [Auteur]
Laboratoire de Physique des Matériaux [PhyMat]

Journal title :

Journal of Applied Physics

Abbreviated title :

Journal of Applied Physics

Volume number :

105

Pages :

026104

Publisher :

AIP Publishing

Publication date :

2009-01-15

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending ...
Show more >We performed molecular dynamics simulations of silicon nanostructures submitted to various stresses and temperatures. For a given stress orientation, a transition in the onset of silicon plasticity is revealed depending on the temperature and stress magnitude. At high temperature and low stress, partial dislocation loops are nucleated in the {111} glide set planes. But at low temperature and very high stress, perfect dislocation loops are formed in the other set of {111} planes called shuffle. This result confirmed by three different classical potentials suggests that plasticity in silicon nanostructures could be controlled by dislocation nucleation.Show less >

Language :

Anglais

Audience :

Internationale

Popular science :

Non

Collections :

• Autres travaux scientifiques

Submission date :

2020-02-21T10:31:38Z
2020-03-17T15:18:40Z