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Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 10-2019, 66; 10, 4156-4163Compte-rendu et recension critique d'ouvrage -
Low-frequency noise parameter extraction method for single-layer graphene FETs
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2020, 67; 5, 2093-2099Compte-rendu et recension critique d'ouvragefulltext
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Electrical study of pentacene-based metal-semiconductor-metal structure: Schottky barrier and active layer thickness effects
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 11-2018, 65; 11, 5009-5013Compte-rendu et recension critique d'ouvragefulltext
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Fully atomistic simulations of phonon-limited mobility of electrons and holes in <001>-, <110>-, and <111>-oriented Si nanowires
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2012, 59, 1480-1487Compte-rendu et recension critique d'ouvrage -
High-performance GaNAsSb/GaAs 1.55-µm waveguide photodetector
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2011, 58, 758-763Compte-rendu et recension critique d'ouvrage -
Characterization and Modeling of Graphene Transistor Low-Frequency Noise
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 01-02-2012, 59; 2, 516-519Compte-rendu et recension critique d'ouvrage -
Thermal noise in MOSFETs : a two- or a three-parameter noise model ?
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2010, 57, 1188-1191Compte-rendu et recension critique d'ouvrage -
3D self-assembling and actuation of electrostatic microstructures
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2001, 48, 1833-1839Compte-rendu et recension critique d'ouvrage -
High-frequency noise performance of 60-nm gate-length FinFETs
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2008, 55, 2718-2727Compte-rendu et recension critique d'ouvrage -
Impact of lateral asymmetry of MOSFETs on the gate-drain noise correlation
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2008, 55, 2268-2272Compte-rendu et recension critique d'ouvrage