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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes
Nanotechnology, Institute of Physics, 02-10-2020, 31; 40, 405204, 7 pagesCompte-rendu et recension critique d'ouvragefulltext
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Thermal response and correlation between mobility and kink effect in GaN HEMTs
MICROELECTRONIC ENGINEERING, Elsevier, 15-01-2020, 219, 111148, 5 pagesCompte-rendu et recension critique d'ouvrage -
Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition
Microelectronics Journal, Elsevier, 02-2020, 96, 104700, 6 pagesCompte-rendu et recension critique d'ouvrage -
Multibias and temperature dependence of the current-gain peak in GaN HEMT
International Journal of RF and Microwave Computer-Aided Engineering, Wiley, 04-2020, 30; 4Compte-rendu et recension critique d'ouvrage -
Evaluation of micro laser sintering metal 3D-printing technology for the development of waveguide passive devices up to 325 GHz
IEEE/MTT-S International Microwave Symposium, IMS 2020, Los Angeles, 04-08-2020, Proceedings of 2020 IEEE MTT-S International Microwave Symposium, IMS 2020, IEEE, 04-08-2020Communication dans un congrès avec actesfulltext
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Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements
31st European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2020, Athens, 04-10-2020, Microelectronics Reliability; Microelectron. Reliab. 114, Special issue (2020), Microelectron. Reliab. 114, Special issue (2020), Elsevier, 10-2020Communication dans un congrès avec actesfulltext
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Coplanar waveguides on BCB measured up to 760 GHz
Journal of Electromagnetic Waves and Applications, Taylor & Francis, 05-2021, 1-11Compte-rendu et recension critique d'ouvrage -
Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 11-2022, 69; 11, 6010-6015Compte-rendu et recension critique d'ouvrage -
Experimental insight into the third-order intercepts and nonlinear distortion of GaN HEMTs
International Journal of RF and Microwave Computer-Aided Engineering, Wiley, 02-2021, 31; 2, 10 pagesCompte-rendu et recension critique d'ouvrage -
220 GHz E-Plane Transition from Waveguide to Suspended Stripline Integrated on Industrial Organic Laminate Substrate Technology
European Microwave Conference, EuMC 2021, Session EuMC06 - 3D to 2D Transitions and New Materials for mmWave system Integration, London, 02-04-2021, 2021 51st European Microwave Conference (EuMC), 02-06-2021Communication dans un congrès avec actesfulltext