Diffusion mechanism of bound Schottky ...
Type de document :
Article dans une revue scientifique: Article original
URL permanente :
Titre :
Diffusion mechanism of bound Schottky defect in magnesium oxide
Auteur(s) :
Mahmoud, Sami [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Carrez, Philippe [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Landeiro Dos Reis, Marie [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Mousseau, Normand [Auteur]
Département de Physique [Montréal]
Regroupement Québécois sur les Matériaux de Pointe [RQMP]
Cordier, Patrick [Auteur]
Institut universitaire de France [IUF]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Carrez, Philippe [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Landeiro Dos Reis, Marie [Auteur]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Mousseau, Normand [Auteur]
Département de Physique [Montréal]
Regroupement Québécois sur les Matériaux de Pointe [RQMP]
Cordier, Patrick [Auteur]
Institut universitaire de France [IUF]
Unité Matériaux et Transformations - UMR 8207 [UMET]
Titre de la revue :
Physical Review Materials
Nom court de la revue :
Phys. Rev. Materials
Numéro :
5
Pagination :
033609
Éditeur :
American Physical Society (APS)
Date de publication :
2021-03-25
ISSN :
2475-9953
Mot(s)-clé(s) en anglais :
Point defects
Self-diffusion
Self-diffusion
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Planète et Univers [physics]/Sciences de la Terre
Planète et Univers [physics]/Sciences de la Terre
Résumé en anglais : [en]
In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since ...
Lire la suite >In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since vacancies are charged, the stable configuration of the Schottky defect corresponds to a bound pair of vacancies of opposite signs. In this study, we investigate the kinetics of formation and migration of such a bound pair on long timescales reaching in some cases thousands of seconds using the kinetic activation-relaxation technique, an off-lattice kinetic Monte Carlo method with an event catalog built on-the-fly during static molecular simulations. We show that the diffusion of this bound Schottky defect involves the migration of vacancies bounded to the first and third neighbor sites of the crystal structure with an apparent migration energy which cannot be inferred from the migration energies expected from isolated defects. Overall, this study gives insights and constraints on the oxygen diffusion mechanism reported experimentally in high-purity MgO samples.Lire moins >
Lire la suite >In simple ionic crystals, intrinsic point defects must satisfy electrical neutrality and exist as Schottky defects. In magnesium oxide (MgO), a Schottky defect is then a combination of anionic and cationic vacancies. Since vacancies are charged, the stable configuration of the Schottky defect corresponds to a bound pair of vacancies of opposite signs. In this study, we investigate the kinetics of formation and migration of such a bound pair on long timescales reaching in some cases thousands of seconds using the kinetic activation-relaxation technique, an off-lattice kinetic Monte Carlo method with an event catalog built on-the-fly during static molecular simulations. We show that the diffusion of this bound Schottky defect involves the migration of vacancies bounded to the first and third neighbor sites of the crystal structure with an apparent migration energy which cannot be inferred from the migration energies expected from isolated defects. Overall, this study gives insights and constraints on the oxygen diffusion mechanism reported experimentally in high-purity MgO samples.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Projet Européen :
Établissement(s) :
Université de Lille
CNRS
INRA
ENSCL
CNRS
INRA
ENSCL
Collections :
Équipe(s) de recherche :
Plasticité
Date de dépôt :
2021-03-26T10:09:12Z
2021-03-26T15:45:00Z
2021-03-26T15:45:00Z