Title :

Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs

Author(s) :

Gao, Zhan [Auteur correspondant]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghini, Matteo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Harrouche, Kathia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chiocchetta, Francesca [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rampazzo, Fabiana [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
de Santi, Carlo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Meneghesso, Gaudenzio [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Zanoni, Enrico [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]

Journal title :

Microelectronics Reliability

Pages :

114199

Publisher :

Elsevier

Publication date :

2021-08

ISSN :

0026-2714

English keyword(s) :

AlN/GaN HEMTs
reliability
stress
breakdown mechanism
electric field
radio frequency

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown ...
Show more >Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means of off-state, semi-on state and on-state step stress tests on devices having different gate-drain distance, LGD. While breakdown voltages and critical voltages scale almost linearly with LGD, failure mode remains almost unchanged in all tested devices, and consists in an increase of gate leakage, accompanied by a positive shift of threshold voltage. In off-state, electroluminescence images detect the presence of localized leakage paths which may act as preferential paths for electron trapping. Degradation is therefore preliminary attributed to hot-electron trapping, enhanced by electric fields.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

European Project :

Advanced RF Transceivers for 5G base stations based on GaN Technology

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL