High performance heterostructure low barrier ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
High performance heterostructure low barrier diodes for sub-THz detection
Author(s) :
Nadar, Salman [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Coinon, Christophe [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur correspondant]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gamand, Florent [Auteur]
Thirault, Maxime [Auteur]
Werquin, Matthieu [Auteur]
Jonniau, Sylvain [Auteur]
Thouvenin, Nicolas [Auteur]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vellas, Nicolas [Auteur]
Lampin, Jean-Francois [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zaknoune, Mohammed [Auteur]

Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]

EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Coinon, Christophe [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur correspondant]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gamand, Florent [Auteur]
Thirault, Maxime [Auteur]
Werquin, Matthieu [Auteur]
Jonniau, Sylvain [Auteur]
Thouvenin, Nicolas [Auteur]
Gaquiere, Christophe [Auteur]

Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vellas, Nicolas [Auteur]
Lampin, Jean-Francois [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Transactions on Terahertz Science and Technology
Pages :
780-788
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2017
ISSN :
2156-342X
English keyword(s) :
Semiconductor detectors
semiconductor diodes
submillimeter wave integrated circuits
terahertz (THz) radiation
semiconductor diodes
submillimeter wave integrated circuits
terahertz (THz) radiation
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Heterostructure low barrier diodes (HLBD) based on lattice-matched AlGaInAs triangular barrier have been designed, fabricated, and characterized for zero-bias millimeter-wave and submillimeter-wave detection. Detectors ...
Show more >Heterostructure low barrier diodes (HLBD) based on lattice-matched AlGaInAs triangular barrier have been designed, fabricated, and characterized for zero-bias millimeter-wave and submillimeter-wave detection. Detectors with different barrier height and various active areas have been measured in order to determine the best structure for low-level radiometric detection. Unmatched responsivity of 1500-2000 V/W have been measured around 100 GHz with a video resistance of 400 to 800 O. Thanks to these low-impedances high-matched responsivity of 6000 and 5200 V/W have been demonstrated around 90 and 180 GHz, respectively, with a bandwidth of 25 GHz. Avery lownoise equivalent power of about 0.6 and 0.7 pW/root Hz have been deduced at 90 and 180 GHz, respectively. We show also that the dynamic range of these detectors is more than six decades. This performance makes the HLBD an interesting device for low-level sub-THz detection applications.Show less >
Show more >Heterostructure low barrier diodes (HLBD) based on lattice-matched AlGaInAs triangular barrier have been designed, fabricated, and characterized for zero-bias millimeter-wave and submillimeter-wave detection. Detectors with different barrier height and various active areas have been measured in order to determine the best structure for low-level radiometric detection. Unmatched responsivity of 1500-2000 V/W have been measured around 100 GHz with a video resistance of 400 to 800 O. Thanks to these low-impedances high-matched responsivity of 6000 and 5200 V/W have been demonstrated around 90 and 180 GHz, respectively, with a bandwidth of 25 GHz. Avery lownoise equivalent power of about 0.6 and 0.7 pW/root Hz have been deduced at 90 and 180 GHz, respectively. We show also that the dynamic range of these detectors is more than six decades. This performance makes the HLBD an interesting device for low-level sub-THz detection applications.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :