Anomalous DC and RF behavior of virgin ...
Type de document :
Article dans une revue scientifique: Article original
DOI :
Titre :
Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs
Auteur(s) :
Sanchez-Martin, Hector [Auteur correspondant]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Garcia-Perez, Oscar [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Pérez, Susana [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Altuntas, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hoel, Virginie [Auteur]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rennesson, Stephanie [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
González, Tomás [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Mateos, Javier [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Íñiguez-De-La-Torre, Ignacio [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Garcia-Perez, Oscar [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Pérez, Susana [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Altuntas, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Hoel, Virginie [Auteur]

Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rennesson, Stephanie [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
González, Tomás [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Mateos, Javier [Auteur]
Departamento de Fisica Aplicada [Salamanca]
Íñiguez-De-La-Torre, Ignacio [Auteur]
Universidad de Salamanca [España] = University of Salamanca [Spain]
Titre de la revue :
Semiconductor Science and Technology
Pagination :
035011, 8 pages
Éditeur :
IOP Publishing
Date de publication :
2017-03
ISSN :
0268-1242
Mot(s)-clé(s) en anglais :
small signal equivalent circuit
gallium nitride (GaN)
high electron mobility transistor (HEMT)
microwave transistors
traps
gallium nitride (GaN)
high electron mobility transistor (HEMT)
microwave transistors
traps
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by ...
Lire la suite >The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the microwave range, both in the transconductance and output conductance, are analyzed. This anomalous response, which is mitigated by high-bias conditions, is attributed to the presence of traps and defects both in the volume of the GaN channel and in the source and drain contacts. A simple equivalent circuit model is proposed to replicate the dispersive response of the transistor, achieving an excellent agreement with the measured S-parameters and thus providing relevant information about its characteristic frequency.Lire moins >
Lire la suite >The performance of gallium nitride transistors is still limited by technological problems often related to defects and traps. In this work, virgin AlGaN/AlN/GaN HEMTs exhibiting an anomalous DC behavior accompanied by frequency dispersion in the microwave range, both in the transconductance and output conductance, are analyzed. This anomalous response, which is mitigated by high-bias conditions, is attributed to the presence of traps and defects both in the volume of the GaN channel and in the source and drain contacts. A simple equivalent circuit model is proposed to replicate the dispersive response of the transistor, achieving an excellent agreement with the measured S-parameters and thus providing relevant information about its characteristic frequency.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Projet ANR :
Source :