Development of a millimeter-long Travelling ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Development of a millimeter-long Travelling wave THz photomixer
Author(s) :
Bavedila, Fuanki [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tannoury, Charbel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lin, Quyang [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Yarekha, Dmytro [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faucher, Marc [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Troadec, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Loas, Goulc'Hen [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [FOTON]
Magnin, Vincent [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tannoury, Charbel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lin, Quyang [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Okada, Etienne [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Yarekha, Dmytro [Auteur]

Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faucher, Marc [Auteur]

Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Troadec, David [Auteur]

Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Loas, Goulc'Hen [Auteur]
Institut des Fonctions Optiques pour les Technologies de l'informatiON [FOTON]
Magnin, Vincent [Auteur]

Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Journal title :
Journal of Lightwave Technology
Pages :
4700-4709
Publisher :
Institute of Electrical and Electronics Engineers (IEEE)/Optical Society of America(OSA)
Publication date :
2021-07-15
ISSN :
0733-8724
English keyword(s) :
Photomixing
THz sources
Ultrafast photodetectors
Travelling Wave devices
THz sources
Ultrafast photodetectors
Travelling Wave devices
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
THz sources based on the optical-heterodyne (photo)mixing in an ultrafast photodetector are very promising since they operate at room temperature, are potentially compact, cost-efficient and, above all, are widely ...
Show more >THz sources based on the optical-heterodyne (photo)mixing in an ultrafast photodetector are very promising since they operate at room temperature, are potentially compact, cost-efficient and, above all, are widely frequencytunable. However, their widespread use is currently hampered by available power levels in the µW range at THz frequencies. We present here a travelling wave structure, with millimeter level coherence length at THz frequencies opening the way to large active area (~4000 µm 2) photomixing devices capable of handling optical pump power beyond 1 W well beyond the capabilities of standard lumped-element devices using small active areas (<50 µm 2) needed to maintain a capacitance level (<10 fF) compatible with THz operation. It is based on a silicon nitride waveguide coupled to a membrane-supported lowtemperature-grown GaAs photoconductor embedded in a coplanar waveguide. Milliwatt power levels up to 1 THz and still above 1 µW up to 4 THz are expected according to the optoelectronics model of this device elaborated in this study. Experimentally, the frequency response of a 1-mm-long structure, measured up to 100 GHz by using the beatnote produced by two 780-nm-DFB lasers, shows clearly the expected travelling wave signature consisting in a 6-dB-decrease ending at ~50 GHz when the contribution of the backward travelling wave is fully cancelled, following by a constant level up to ~100 GHz. The experimental demonstration of operation in the travelling wave regime is a first step towards the fulfillment of the original promises of this concept in terms of power level and frequency bandwidth.Show less >
Show more >THz sources based on the optical-heterodyne (photo)mixing in an ultrafast photodetector are very promising since they operate at room temperature, are potentially compact, cost-efficient and, above all, are widely frequencytunable. However, their widespread use is currently hampered by available power levels in the µW range at THz frequencies. We present here a travelling wave structure, with millimeter level coherence length at THz frequencies opening the way to large active area (~4000 µm 2) photomixing devices capable of handling optical pump power beyond 1 W well beyond the capabilities of standard lumped-element devices using small active areas (<50 µm 2) needed to maintain a capacitance level (<10 fF) compatible with THz operation. It is based on a silicon nitride waveguide coupled to a membrane-supported lowtemperature-grown GaAs photoconductor embedded in a coplanar waveguide. Milliwatt power levels up to 1 THz and still above 1 µW up to 4 THz are expected according to the optoelectronics model of this device elaborated in this study. Experimentally, the frequency response of a 1-mm-long structure, measured up to 100 GHz by using the beatnote produced by two 780-nm-DFB lasers, shows clearly the expected travelling wave signature consisting in a 6-dB-decrease ending at ~50 GHz when the contribution of the backward travelling wave is fully cancelled, following by a constant level up to ~100 GHz. The experimental demonstration of operation in the travelling wave regime is a first step towards the fulfillment of the original promises of this concept in terms of power level and frequency bandwidth.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
Files
- https://hal.archives-ouvertes.fr/hal-03264678/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-03264678/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-03264678/document
- Open access
- Access the document
- document
- Open access
- Access the document
- ManuscriptJLT_HAL.pdf
- Open access
- Access the document
- document
- Open access
- Access the document