Progress and opportunities in high-voltage ...
Document type :
Article dans une revue scientifique
DOI :
Title :
Progress and opportunities in high-voltage microactuator powering technology towards one-chip MEMS
Author(s) :
Mita, Yoshio [Auteur]
The University of Tokyo [UTokyo]
Hirakawa, Atsushi [Auteur]
Stefanelli, Bruno [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mori, Isao [Auteur]
The University of Tokyo [UTokyo]
Okamoto, Yuki [Auteur]
The University of Tokyo [UTokyo]
Morishita, Satoshi [Auteur]
The University of Tokyo [UTokyo]
Kubota, Masanori [Auteur]
The University of Tokyo [UTokyo]
Lebrasseur, Eric [Auteur]
Laboratory for Integrated Micro Mechatronics Systems [LIMMS]
Kaiser, Andreas [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
The University of Tokyo [UTokyo]
Hirakawa, Atsushi [Auteur]
Stefanelli, Bruno [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mori, Isao [Auteur]
The University of Tokyo [UTokyo]
Okamoto, Yuki [Auteur]
The University of Tokyo [UTokyo]
Morishita, Satoshi [Auteur]
The University of Tokyo [UTokyo]
Kubota, Masanori [Auteur]
The University of Tokyo [UTokyo]
Lebrasseur, Eric [Auteur]
Laboratory for Integrated Micro Mechatronics Systems [LIMMS]
Kaiser, Andreas [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Japanese Journal of Applied Physics
Pages :
04FA05, 14 pages
Publisher :
Japan Society of Applied Physics
Publication date :
2018-04
ISSN :
0021-4922
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, ...
Show more >In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout. (C) 2018 The Japan Society of Applied Physics.Show less >
Show more >In this paper, we address issues and solutions for micro-electro-mechanical-systems (MEMS) powering through semiconductor devices towards one-chip MEMS, especially those with microactuators that require high voltage (HV, which is more than 10 V, and is often over 100 V) for operation. We experimentally and theoretically demonstrated that the main reason why MEMS actuators need such HV is the tradeoff between resonant frequency and displacement amplitude. Indeed, the product of frequency and displacement is constant regardless of the MEMS design, but proportional to the input energy, which is the square of applied voltage in an electrostatic actuator. A comprehensive study on the principles of HV device technology and associated circuit technologies, especially voltage shifter circuits, was conducted. From the viewpoint of on-chip energy source, series-connected HV photovoltaic cells have been discussed. Isolation and electrical connection methods were identified to be key enabling technologies. Towards future rapid development of such autonomous devices, a technology to convert standard 5 V CMOS devices into HV circuits using SOI substrate and a MEMS postprocess is presented. HV breakdown experiments demonstrated this technology can hold over 700 to 1000 V, depending on the layout. (C) 2018 The Japan Society of Applied Physics.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :