High Frequency Analysis and Small-Signal ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
High Frequency Analysis and Small-Signal Modeling of AlGaN/GaN HEMTs with SiO2/SiN Passivation
Author(s) :
Gassoumi, Moujahed [Auteur]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Helali, Abdelhamid [Auteur]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Gassoumi, Malek [Auteur]
Qassim University [Kingdom of Saudi Arabia]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Maaref, Hassen [Auteur]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Helali, Abdelhamid [Auteur]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Gassoumi, Malek [Auteur]
Qassim University [Kingdom of Saudi Arabia]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Gaquiere, Christophe [Auteur]

Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Maaref, Hassen [Auteur]
Laboratoire de Micro-optoélectronique et Nanostructures [Monastir]
Journal title :
Silicon
Pages :
557-562
Publisher :
Springer
Publication date :
2019
ISSN :
1876-990X
English keyword(s) :
Radio-frequency
Equivalent circuit parameters
Small signal modeling
Passivation
AlGaN/GaN/Si HEMTs
Equivalent circuit parameters
Small signal modeling
Passivation
AlGaN/GaN/Si HEMTs
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. ...
Show more >AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to reduce the effects of trapping and consequently has a large effect on these radio-frequency parameters. We used cold-FET and hot FET technique to extract the intrinsic and extrinsic parameters in order to show the effect passivation of parasitic elements; the parasitic capacitances, resistances and inductances. From this point we discover the extent of their impact on power and microwave performance.Show less >
Show more >AlGaN/GaN high electron mobility transistors (HEMTs) on Silicon substrates grown by molecular beam epitaxy have been investigated using small-signal microwave measurements, to see performance Radio-frequency of components. Passivation of HEMT devices SiO2/SiN a different pretreatment is used to reduce the effects of trapping and consequently has a large effect on these radio-frequency parameters. We used cold-FET and hot FET technique to extract the intrinsic and extrinsic parameters in order to show the effect passivation of parasitic elements; the parasitic capacitances, resistances and inductances. From this point we discover the extent of their impact on power and microwave performance.Show less >
Language :
Anglais
Popular science :
Non
Source :
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