Title :

Extraction of packaged GaN power transistors parasitics using S-parameters

Author(s) :

Pace, Loris [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Defrance, N. [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Videt, Arnaud [Auteur]
Laboratoire d’Électrotechnique et d’Électronique de Puissance - ULR 2697 [L2EP]
Idir, N. [Auteur]
de Jaeger, Jean-Claude [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Transactions on Electron Devices

Pages :

2583-2588

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2019-06

ISSN :

0018-9383

English keyword(s) :

Access inductances
access resistances
capacitances
gallium nitride (GaN)
power transistors
S-parameters

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In order to better predict the high-frequency switching operation of transistors in power converters, parasitic elements of these devices such as resistances, inductances, and capacitances must be accurately evaluated. ...
Show more >In order to better predict the high-frequency switching operation of transistors in power converters, parasitic elements of these devices such as resistances, inductances, and capacitances must be accurately evaluated. This paper reports on the characterization of a gallium nitride (GaN) packaged power transistor using S-parameters in order to extract the device parasitics. Because the transistor is packaged, a calibration technique is carried out using specific test fixtures designed on FR4 printed circuit board (PCB) in order to get the S-parameters in the transistor plane from the measurement. The proposed method is suitable for a wide range of power devices. In this paper, it is applied to an enhancement-mode GaN high electron mobility transistor (HEMT). The impact of junction temperature on drain and source resistances is also evaluated. According to characterization results, equation-based modeling is proposed for the nonlinear parameters. The extracted parasitic elements are compared with reference values given by the device manufacturer.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL