Millimeter-wave noise source development ...
Type de document :
Compte-rendu et recension critique d'ouvrage
Titre :
Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz
Auteur(s) :
Azevedo Goncalves, Joao Carlos [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Ghanem, Haitham [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THz - IEMN]
Bouvot, Simon [Auteur]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THz - IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Danneville, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
STMicroelectronics [Crolles] [ST-CROLLES]
Ghanem, Haitham [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THz - IEMN]
Bouvot, Simon [Auteur]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THz - IEMN]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Danneville, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Titre de la revue :
IEEE Transactions on Microwave Theory and Techniques
Pagination :
3732-3742
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2019-09
ISSN :
0018-9480
Mot(s)-clé(s) en anglais :
In situ noise characterization
integrated noise source
millimeter wave (mmW)
Receivers
Schottky diodes
Noise measurement
Frequency measurement
Temperature measurement
Silicon
BiCMOS integrated circuits
integrated noise source
millimeter wave (mmW)
Receivers
Schottky diodes
Noise measurement
Frequency measurement
Temperature measurement
Silicon
BiCMOS integrated circuits
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based ...
Lire la suite >This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and Schottky junction in series, realized on the SiGe BiCMOS 55-nm technology from STMicroelectronics. Biased in the avalanche regime, this integrated diode noise source achieves a tunable excess noise ratio (ENR) ranged between 0 dB and 15 dB, in the 130-260-GHz frequency range. In order to highlight the usefulness of the integrated noise source, the noise figure of two amplifiers was measured: the first one is an integrated low-noise amplifier (LNA) operating in the D-band (130-170 GHz) while the second one is packaged and operates from 220 to 260 GHz. Due to its ability to be naturally integrated on silicon, this noise source features a strong interest to carry out high-frequency in situ noise characterization of advanced Si CMOS or BiCMOS technologies in the mmW range.Lire moins >
Lire la suite >This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and Schottky junction in series, realized on the SiGe BiCMOS 55-nm technology from STMicroelectronics. Biased in the avalanche regime, this integrated diode noise source achieves a tunable excess noise ratio (ENR) ranged between 0 dB and 15 dB, in the 130-260-GHz frequency range. In order to highlight the usefulness of the integrated noise source, the noise figure of two amplifiers was measured: the first one is an integrated low-noise amplifier (LNA) operating in the D-band (130-170 GHz) while the second one is packaged and operates from 220 to 260 GHz. Due to its ability to be naturally integrated on silicon, this noise source features a strong interest to carry out high-frequency in situ noise characterization of advanced Si CMOS or BiCMOS technologies in the mmW range.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :