Title :

Millimeter-wave noise source development on SiGe BiCMOS 55-nm technology for applications up to 260 GHz

Author(s) :

Azevedo Goncalves, Joao Carlos [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Ghanem, Haitham [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Bouvot, Simon [Auteur]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gaquiere, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Danneville, François [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Transactions on Microwave Theory and Techniques

Pages :

3732-3742

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2019-09

ISSN :

0018-9480

English keyword(s) :

In situ noise characterization
integrated noise source
millimeter wave (mmW)
Receivers
Schottky diodes
Noise measurement
Frequency measurement
Temperature measurement
Silicon
BiCMOS integrated circuits

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based ...
Show more >This paper describes the development and characterization of a millimeter-wave (mmW) integrated noise source development on silicon technology for applications up to 260 GHz. The developed integrated noise source is based on p-n and Schottky junction in series, realized on the SiGe BiCMOS 55-nm technology from STMicroelectronics. Biased in the avalanche regime, this integrated diode noise source achieves a tunable excess noise ratio (ENR) ranged between 0 dB and 15 dB, in the 130-260-GHz frequency range. In order to highlight the usefulness of the integrated noise source, the noise figure of two amplifiers was measured: the first one is an integrated low-noise amplifier (LNA) operating in the D-band (130-170 GHz) while the second one is packaged and operates from 220 to 260 GHz. Due to its ability to be naturally integrated on silicon, this noise source features a strong interest to carry out high-frequency in situ noise characterization of advanced Si CMOS or BiCMOS technologies in the mmW range.Show less >

Language :

Anglais

Popular science :

Non

European Project :

TowARds Advanced bicmos NanoTechnology platforms for rf and thz applicatiOns

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL