2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Khan, Md. Abdul Kaium; Alim, Mohammad Abdul; Gaquière, Christophe

Type de document :

Article dans une revue scientifique

DOI :

10.1016/j.mee.2021.111508

Titre :

2DEG transport properties over temperature for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT

Auteur(s) :

Khan, Md. Abdul Kaium [Auteur]
Alim, Mohammad Abdul [Auteur]
Gaquière, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

MICROELECTRONIC ENGINEERING

Pagination :

111508

Éditeur :

Elsevier

Date de publication :

2021-02-01

ISSN :

0167-9317

Mot(s)-clé(s) en anglais :

GaN HEMT
Pseudomorphic GaN pHEMT
2DEG
Conduction band offset
Temperature

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

For the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial. Herein, ...
Lire la suite >For the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial. Herein, the temperature dependency of 2DEG for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT has been analyzed theoretically and experimentally over the temperature range of ?40 °C to 150 °C. From the experimental and numerical data, a decreasing nature of 2DEG density is noticed for both the devices. The reduction rate in magnitude is higher for AlGaN/GaN HEMT compared to AlGaN/InGaN/GaN pHEMT. It is identified that the reduction of conduction band offset at higher temperatures is responsible for this decreasing nature. Incorporation of an extra 5 nm thick pseudomorphic layer of InGaN in AlGaN/InGaN/GaN pHEMT improves the 2DEG transport properties and enhances the overall transistor performance. Comparatively, the AlGaN/InGaN/GaN pHEMT is found to be exhibiting better 2DEG stability with temperature than AlGaN/GaN HEMT.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

2DEG transport properties over temperature ... BibTeX CSV Excel RIS

2DEG transport properties over temperature ...

BibTeX

CSV

Excel

RIS