Silicon Based Diode Noise Source Scaling For Noise Measurement Up To 325 GHz

Ghanem, H.; Azevedo-Goncalves, J-C.; Lepilliet, sl; Gloria, D.; Gaquiere, Christophe; Danneville, François; Ducournau, Guillaume

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes

DOI :

10.1109/IRMMW-THz.2019.8873929

Title :

Silicon Based Diode Noise Source Scaling For Noise Measurement Up To 325 GHz

Author(s) :

Ghanem, H. [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Azevedo-Goncalves, J-C. [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gloria, D. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gaquiere, Christophe [Auteur]

Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Danneville, François [Auteur]

Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ducournau, Guillaume [Auteur]

Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

City :

Paris

Country :

France

Start date of the conference :

2019-09-01

Publisher :

IEEE

English keyword(s) :

Photodiode UTC
Receivers
Silicon
Frequency measurement
Noise figure
Millimeter wave technology
Millimeter wave measurements

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In this article, we investigate the use of silicon-based diode for millimeter-wave noise generation. A test bench setup was characterized to perform broadband noise measurements up to 325 GHz. A noise receiver is assembled ...
Show more >In this article, we investigate the use of silicon-based diode for millimeter-wave noise generation. A test bench setup was characterized to perform broadband noise measurements up to 325 GHz. A noise receiver is assembled and its Noise Figure (NF) was extracted using cryogenic Hot/Cold measurements. A unitravelling carrier photodiode (UTC-PD) is used as a noise source and the Excess Noise Ratio (ENR) is extracted using the Y-method. The latter was used as a reference for 300 GHz noise generation. The ENR value of the UTC-PD is then compared to that of a silicon based integrated diode noise source, where the ENR value was also extracted using the same receiver structure, to evaluate the integrated diode performance up to 325 GHz where it will be used to carry out noise measurements up to this frequency range.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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