Title :

GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal

Author(s) :

Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Canato, Eleonora [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghini, Matteo [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Meneghesso, Gaudenzio [Auteur]
Università degli Studi di Padova = University of Padua [Unipd]
Cheng, Kai [Auteur]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Applied Physics Express

Pages :

036501

Publisher :

IOPScience - Japan Society of Applied Physics

Publication date :

2021-02

ISSN :

1882-0786

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. Substrate ramp ...
Show more >We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. Substrate ramp measurements show reduced hysteresis up to 3000 V. It has been found that the LSR approach not only enable to extend the operation voltage capabilities of GaN-on-Silicon HEMTs with low on-resistance but also allow to reduce trapping effects directly affecting their dynamic behavior. This work points out that a large part of the electron trapping under high bias occurs at the AlN nucleation layer and Si substrate interface.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL