Title :

Theoretical modeling and optimization of GaAsPN/GaAs tandem dual-junction solar cells

Author(s) :

Azzououm, Ahmed Bahi [Auteur]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

International Conference on Electronic Engineering and Renewable Energy, ICEERE 2020

City :

Saidia

Country :

Maroc

Start date of the conference :

2020-04-13

Book title :

Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems
Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems, ICEERE 2020

Journal title :

Lecture notes in Electrical Engineering

Publication date :

2020-08-15

English keyword(s) :

Tandem junction cell
Nitride
Efficiency
External quantum Efficiency

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

This paper presents an optimization and simulation of optical and electrical properties of GaAsPN/GaAs tandem Dual-Junction solar cells such as current density-voltage (J-V), external quantum efficiency (EQE), with an AM1.5 ...
Show more >This paper presents an optimization and simulation of optical and electrical properties of GaAsPN/GaAs tandem Dual-Junction solar cells such as current density-voltage (J-V), external quantum efficiency (EQE), with an AM1.5 solar spectrum. We comparing the simulated performance of various N fractions and we will show that the use of N=0.01 improve the performances of external quantum efficiency (EQE) and current-voltage characteristics. Our results have been shown that an optimal efficiency of about 26.19% was obtained with P composition x=0.37 and N fractions y=0.01. In addition, a doping of 2.1018 cm^-3 of the GaAs_0.62P_0.37N_0.1 base top cell boosts the efficiency from 25.73% to 26.19%.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL