Title :

Investigation of Temperature, Well Width and Composition Effects on the Intersubband Absorption of InGaAs/GaAs Quantum Wells

Author(s) :

Chenini, Lynda [Auteur]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ammi, Sofiane [Auteur]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

2nd International Conference on Electronic Engineering and Renewable Energy Systems

City :

Saidia

Country :

Maroc

Start date of the conference :

2020-04-13

Book title :

Proceedings of the 2nd International Conference on Electronic Engineering and Renewable Energy Systems
2nd International Conference on Electronic Engineering and Renewable Energy Systems, ICEERE 2020

Journal title :

Proceedings of 2nd International Conference on Electronic Engineering and Renewable Energy Systems

Publication date :

2020-08-15

English keyword(s) :

Intersubband absorption
InGaAs/GaAs
Quantum well
Band offset

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Optical properties of the ternary InxGa1-xAs/GaAs alloys including strain, band gap energy, band offsets, and intersubband absorption coefficient in the conduction band (CB) are theoretically investigated. Effect of ...
Show more >Optical properties of the ternary InxGa1-xAs/GaAs alloys including strain, band gap energy, band offsets, and intersubband absorption coefficient in the conduction band (CB) are theoretically investigated. Effect of temperature, T, and Indium composition, In, of InGaAs on all these parameters is verified. The calculations show that the insertion of indium in the host material, varying the well width, Lw, and changing temperature has pronounced effects on the optical intersubband coefficient of the InGaAs quantum well (QW) structure. These results make the InxGa1-xAs/GaAs alloy promising for realization of mid-infrared devices.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL