Title :

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Author(s) :

de Santi, Carlo [Auteur]
Caria, Alessandro [Auteur]
Renso, Nicola [Auteur]
Dogmus, Ezgi [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Meneghesso, Gaudenzio [Auteur]
Zanoni, Enrico [Auteur]
Meneghini, Matteo [Auteur]

Journal title :

Applied Physics Express

Pages :

111002

Publisher :

IOPScience - Japan Society of Applied Physics

Publication date :

2018

ISSN :

1882-0786

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

We provide experimental evidence that gallium-nitride-based optoelectronic devices can be affected by a photon-driven degradation mechanism unrelated to catastrophic optical damage. Any role of current in such degradation ...
Show more >We provide experimental evidence that gallium-nitride-based optoelectronic devices can be affected by a photon-driven degradation mechanism unrelated to catastrophic optical damage. Any role of current in such degradation is excluded by stress tests under laser irradiation in the open-circuit configuration; any role of temperature is ruled out by additional thermal tests, showing a different degradation mode. Given the high bond strength of GaN, lattice-damage-related degradation is unlikely. A possible cause, supported by the PL spectra, is the dehydrogenation of gallium vacancies, which causes an increase in the number of optically active defects and requires a removal energy lower than the photon energy.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL