Low on-resistance and low trapping effects ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures
Auteur(s) :
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Püsche, Roland [Auteur]
Derluyn, Joff [Auteur]
Degroote, Stefan [Auteur]
Germain, Marianne [Auteur]
Tajalli, Alaleh [Auteur]
Department of Information Engineering [Padova] [DEI]
Meneghini, Matteo [Auteur]
Department of Information Engineering [Padova] [DEI]
Meneghesso, Gaudenzio [Auteur]
Department of Information Engineering [Padova] [DEI]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Püsche, Roland [Auteur]
Derluyn, Joff [Auteur]
Degroote, Stefan [Auteur]
Germain, Marianne [Auteur]
Tajalli, Alaleh [Auteur]
Department of Information Engineering [Padova] [DEI]
Meneghini, Matteo [Auteur]
Department of Information Engineering [Padova] [DEI]
Meneghesso, Gaudenzio [Auteur]
Department of Information Engineering [Padova] [DEI]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
physica status solidi (a)
Special Issue: Nitride Semiconductors
Special Issue: Nitride Semiconductors
Pagination :
1900687
Éditeur :
Wiley
Date de publication :
2020-04
ISSN :
0031-8965
Mot(s)-clé(s) en anglais :
GaN
Silicon
Superlattice
low on-resistance
low trapping effects
Silicon
Superlattice
low on-resistance
low trapping effects
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Résumé en anglais : [en]
Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers ...
Lire la suite >Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without generating additional trapping effects as compared with a more standard optimized step-graded AlGaN-based epistructure using a similar total buffer thickness. DC characterizations of fabricated transistors by means of back-gating measurements reflect both the enhancement of the breakdown voltage and the low trapping effects up to 1200 V. These results show that a proper buffer optimization and the insertion of SL pave the way to GaN-on-Si lateral power transistors operating at 1200 V with low on-resistance and low trapping effects.Lire moins >
Lire la suite >Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without generating additional trapping effects as compared with a more standard optimized step-graded AlGaN-based epistructure using a similar total buffer thickness. DC characterizations of fabricated transistors by means of back-gating measurements reflect both the enhancement of the breakdown voltage and the low trapping effects up to 1200 V. These results show that a proper buffer optimization and the insertion of SL pave the way to GaN-on-Si lateral power transistors operating at 1200 V with low on-resistance and low trapping effects.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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