[Invited] Graphene for radio frequency electronics

Wei, Wei; Dalal, Fadil; Fregonese, Sebastien; Strupinski, Wlodek; Pallecchi, Emiliano; Happy, Henri

[Invited]

Document type :

Communication dans un congrès avec actes

DOI :

10.1109/LAEDC49063.2020.9073546

Title :

[Invited] Graphene for radio frequency electronics
[Invited]

Author(s) :

Wei, Wei [Auteur]
Laboratoire d'ingénierie pour les systèmes complexes [UR LISC]
Dalal, Fadil [Auteur]
Fregonese, Sebastien [Auteur]
Laboratoire de l'intégration, du matériau au système [IMS]
Strupinski, Wlodek [Auteur]
Warsaw University of Technology [Warsaw]
Pallecchi, Emiliano [Auteur]

Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]

Carbon - IEMN [CARBON - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

2020 IEEE Latin America Electron Devices Conference (LAEDC)

City :

San Jose

Country :

Costa Rica

Start date of the conference :

2020-02-25

Book title :

EEE Latin America Electron Devices Conference (LAEDC)

Publisher :

IEEE

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

In the framework of the European project Flagship Graphene, we have developed several process technologies, for fabricating graphene field-effect transistors, for radio frequency (RF) applications. Depending on the technique ...
Show more >In the framework of the European project Flagship Graphene, we have developed several process technologies, for fabricating graphene field-effect transistors, for radio frequency (RF) applications. Depending on the technique used to synthesize graphene, different transistors topologies were designed, given rise to different applications. Graphene materials under consideration include graphene growth on silicon carbide, graphene growth by chemical vapor deposition (CVD) on copper foil. After fabrication of transistors on rigid and on flexible substrates, high frequency characterization of devices is made. Based on the performance of transistors, RF circuits where designed and fabricated.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

European Project :

Graphene Flagship Core Project 2

Comment :

oral

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL