Carrier mobility versus carrier density in Al x Ga 1 − x N / G a N quantum wells

Farvacque, J.-L.; Bougrioua, Zahia

Document type :

Article dans une revue scientifique: Article original

DOI :

10.1103/PhysRevB.68.035335

Title :

Carrier mobility versus carrier density in Al x Ga 1 − x N / G a N quantum wells

Author(s) :

Farvacque, J.-L. [Auteur]
Université de Lille, Sciences et Technologies
Bougrioua, Zahia [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Physical Review B

Publisher :

American Physical Society

Publication date :

2003-07

ISSN :

2469-9950

HAL domain(s) :

Physique [physics]

English abstract : [en]

Experimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering ...
Show more >Experimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering mechanisms that can explain such a behavior is presented. It shows that, even though phonon and carrier-carrier scattering mechanisms naturally lead to a mobility decrease versus carrier density, they are by themselves not able to justify the whole set of experimental data. Instead, we propose to attribute an extrinsic origin to the scattering associated with the progressive appearance of strain relaxation defects and give explicit expressions for the collision time associated with interface roughness and interface charge spatial fluctuations (“electrical” roughness) which may result from the existence of cracks in AlxGa1−xN, thickness inhomogeneity, misfit dislocations, and alloy disorder.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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