Carrier mobility versus carrier density ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Carrier mobility versus carrier density in Al x Ga 1 − x N / G a N quantum wells
Author(s) :
Farvacque, J.-L. [Auteur]
Université de Lille, Sciences et Technologies
Bougrioua, Zahia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Université de Lille, Sciences et Technologies
Bougrioua, Zahia [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Physical Review B
Publisher :
American Physical Society
Publication date :
2003-07
ISSN :
2469-9950
HAL domain(s) :
Physique [physics]
English abstract : [en]
Experimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering ...
Show more >Experimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering mechanisms that can explain such a behavior is presented. It shows that, even though phonon and carrier-carrier scattering mechanisms naturally lead to a mobility decrease versus carrier density, they are by themselves not able to justify the whole set of experimental data. Instead, we propose to attribute an extrinsic origin to the scattering associated with the progressive appearance of strain relaxation defects and give explicit expressions for the collision time associated with interface roughness and interface charge spatial fluctuations (“electrical” roughness) which may result from the existence of cracks in AlxGa1−xN, thickness inhomogeneity, misfit dislocations, and alloy disorder.Show less >
Show more >Experimental measurements show that, in AlxGa1−xN/GaN triangular quantum wells, the free-carrier mobility experiences a strong decrease with increasing carrier density. A theoretical analysis of the various scattering mechanisms that can explain such a behavior is presented. It shows that, even though phonon and carrier-carrier scattering mechanisms naturally lead to a mobility decrease versus carrier density, they are by themselves not able to justify the whole set of experimental data. Instead, we propose to attribute an extrinsic origin to the scattering associated with the progressive appearance of strain relaxation defects and give explicit expressions for the collision time associated with interface roughness and interface charge spatial fluctuations (“electrical” roughness) which may result from the existence of cracks in AlxGa1−xN, thickness inhomogeneity, misfit dislocations, and alloy disorder.Show less >
Language :
Anglais
Popular science :
Non
Source :