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Relationship between classical and quantum ...
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Document type :
Article dans une revue scientifique
DOI :
10.1088/0268-1242/16/5/321
Title :
Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures
Author(s) :
Harris, J [Auteur]
Lee, K [Auteur]
Wang, T. [Auteur]
Sakai, S. [Auteur]
Bougrioua, Z. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moerman, Ingrid [Auteur]
Thrush, E [Auteur]
Webb, J [Auteur]
Tang, Hao [Auteur]
Martin, T [Auteur]
Maude, Duncan Kennedy [Auteur]
Portal, J-C [Auteur]
Journal title :
Semiconductor Science and Technology
Pages :
402-405
Publisher :
IOP Publishing
Publication date :
2001-05-01
ISSN :
0268-1242
HAL domain(s) :
Physique [physics]
English abstract : [en]
Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas ...
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Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq, and this is compared with the classical transport lifetime, τt, derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
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