Title :

Relationship between classical and quantum lifetimes in AlGaN/GaN heterostructures

Author(s) :

Harris, J [Auteur]
Lee, K [Auteur]
Wang, T. [Auteur]
Sakai, S. [Auteur]
Bougrioua, Z. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moerman, Ingrid [Auteur]
Thrush, E [Auteur]
Webb, J [Auteur]
Tang, Hao [Auteur]
Martin, T [Auteur]
Maude, Duncan Kennedy [Auteur]
Portal, J-C [Auteur]

Journal title :

Semiconductor Science and Technology

Pages :

402-405

Publisher :

IOP Publishing

Publication date :

2001-05-01

ISSN :

0268-1242

HAL domain(s) :

Physique [physics]

English abstract : [en]

Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas ...
Show more >Carrier transport in a set of AlGaN/GaN heterostructures from different sources with a range of carrier densities and mobilities has been investigated at low temperature and high magnetic fields. The Shubnikov-de Haas oscillations have been analysed to extract the quantum scattering lifetime, τq, and this is compared with the classical transport lifetime, τt, derived from the low-field mobility. The relationship between these parameters has been observed to depend systematically on the low-field mobility of the samples studied, and indicates that higher-mobility samples suffer less scattering from centres close to the two-dimensional conducting channel.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL