Conductance switching at the nanoscale of ...
Document type :
Article dans une revue scientifique
DOI :
Title :
Conductance switching at the nanoscale of diarylethene derivative self-assembled monolayers on La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub>
Author(s) :
Thomas, Louis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Guérin, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Quinard, Benoît [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Jacquet, Eric [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Mattana, Richard [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Seneor, Pierre [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Vuillaume, Dominique [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Melin, Thierry [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lenfant, Stéphane [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Guérin, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Quinard, Benoît [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Jacquet, Eric [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Mattana, Richard [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Seneor, Pierre [Auteur]
Unité mixte de physique CNRS/Thales [UMPhy CNRS/THALES]
Vuillaume, Dominique [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Melin, Thierry [Auteur]

Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lenfant, Stéphane [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Nanoscale
Pages :
8268-8276
Publisher :
Royal Society of Chemistry
Publication date :
2020-03-09
ISSN :
2040-3364
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> (LSMO). Compact self-assembled ...
Show more >We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode.Show less >
Show more >We report on the phosphonic acid route for the grafting of functional molecules, optical switch (dithienylethene diphosphonic acid, DDA), on La<sub>0.7</sub>Sr<sub>0.3</sub>MnO<sub>3</sub> (LSMO). Compact self-assembled monolayers (SAMs) of DDA are formed on LSMO as studied by topographic atomic force microscopy (AFM), ellipsometry, water contact angle and X-ray photoemission spectroscopy (XPS). The conducting AFM measurements show that the electrical conductance of LSMO/DDA is about 3 decades below that of the bare LSMO substrate. Moreover, the presence of the DDA SAM suppresses the known conductance switching of the LSMO substrate that is induced by mechanical and/or bias constraints during C-AFM measurements. A partial light-induced conductance switching between the open and closed forms of the DDA is observed for the LSMO/DDA/C-AFM tip molecular junctions (closed/open conductance ratio of about 8). We show that, in the case of long-time exposition to UV light, this feature can be masked by a non-reversible decrease (a factor of about 15) of the conductance of the LSMO electrode.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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