Theoretical Study of Intersubband Absorption ...
Document type :
Communication dans un congrès avec actes
Title :
Theoretical Study of Intersubband Absorption Coefficient in GaNAsBi/GaAs Quantum Well Structures
Author(s) :
Chenini, Lynda [Auteur]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
1st International Conference on Electronic Engineering and Renewable Energy
City :
Saidia
Country :
Maroc
Start date of the conference :
2018-04-15
Book title :
Proceedings of the 1st International Conference on Electronic Engineering and Renewable Energy
Publication date :
2019-08-02
English keyword(s) :
Intersubband transition
BAC model
Absorption coefficient
GaNAsBi/GaAs
BAC model
Absorption coefficient
GaNAsBi/GaAs
HAL domain(s) :
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
This work focuses on the study and simulation of a based intersubband GaNAsBi/GaAs quantum well structure. The effect of different physical and optical parameters has been explored. The band gap of GaNAsBi is calculated ...
Show more >This work focuses on the study and simulation of a based intersubband GaNAsBi/GaAs quantum well structure. The effect of different physical and optical parameters has been explored. The band gap of GaNAsBi is calculated using the band anti-crossing model. The influence of the composition and the quantum well width on the intersubband transition within the conduction band has been examined and discussed. We will discuss in detail the influence of these structural parameters on the intersubband absorption coefficient. So, two features have been observed: the evolution of characteristics and the shift of the corresponding emission wavelength. Our simulation contributes to designing and fabricating based GaNAsBi/GaAs optoelectronic intersubband devices in the mid infrared region.Show less >
Show more >This work focuses on the study and simulation of a based intersubband GaNAsBi/GaAs quantum well structure. The effect of different physical and optical parameters has been explored. The band gap of GaNAsBi is calculated using the band anti-crossing model. The influence of the composition and the quantum well width on the intersubband transition within the conduction band has been examined and discussed. We will discuss in detail the influence of these structural parameters on the intersubband absorption coefficient. So, two features have been observed: the evolution of characteristics and the shift of the corresponding emission wavelength. Our simulation contributes to designing and fabricating based GaNAsBi/GaAs optoelectronic intersubband devices in the mid infrared region.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :