Titre :

Suppression of contact noise in a study on 1/ f noise as a function of film thickness in Al-doped ZnO

Auteur(s) :

Achahour, Abicha [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Leroy, Gérard [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Vandamme, L.K.J. [Auteur]
Eindhoven University of Technology [Eindhoven] [TU/e]
Ayachi, Boubakeur [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Duponchel, Benoît [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Waldhoff, Nicolas [Auteur]
Unité de Dynamique et Structure des Matériaux Moléculaires [UDSMM]
Blary, Karine [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Thin Solid Films

Pagination :

70-76

Éditeur :

Elsevier

Date de publication :

2018-01-01

ISSN :

0040-6090

Mot(s)-clé(s) en anglais :

Aluminum-doped zinc oxide
Thin films
Sheet resistance
1/f noise
Mobility
Sputtering

Discipline(s) HAL :

Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

Aluminum doped-zinc oxide (AZO) thin films were prepared on glass substrate by radio-frequency (RF) sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ [Ω·cm] and the 1/f noise were studied as ...
Lire la suite >Aluminum doped-zinc oxide (AZO) thin films were prepared on glass substrate by radio-frequency (RF) sputtering at room temperature. The sheet resistance, Rsh [Ω] the resistivity, ρ [Ω·cm] and the 1/f noise were studied as a function of thickness, t from 50 nm to 450 nm. The eddy current characterized the homogeneity of AZO thin films. The surface morphology has been analysed by atomic force microscopy (AFM). The 1/f noise is normalized with respect to the bias, frequency and unit area, and Cus is proportional to the sheet resistance Rsh. Two configurations were used to characterize material and contact noise. The pressure effect of four point-probe on the material and the contact noise were also investigated. Our results show that the homogeneity of the samples increases as the film thickness increases and the resistivity decreases with increasing thickness and reaches the lowest value of 1 × 10− 3 Ω cm at 450 nm. The average grain size and the root-mean-square roughness increases with rising thickness. The ratio K = Cus / Rsh is proportional to t2, which indicates that the mobility and the noise parameter αH shrink with the shrinkage of the thickness.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL