Title :

Role of V-pits in the performance improvement of InGaN solar cells

Author(s) :

Arif, Muhammad [Auteur]
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Streque, Jérémy [Auteur]
Georgia Tech Lorraine [Metz]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jordan, Matthew [Auteur]
Georgia Tech Lorraine [Metz]
El Gmili, Youssef [Auteur]
Georgia Tech Lorraine [Metz]
Sundaram, Suresh [Auteur]
Georgia Tech Lorraine [Metz]
Li, Xin [Auteur]
Georgia Tech Lorraine [Metz]
School of Instrumentation Science and Opto-electronics Engineering [Beijing]
Patriarche, Gilles [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Voss, Paul [Auteur]
Georgia Tech Lorraine [Metz]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]

Publisher :

American Institute of Physics

Publication date :

2016-09-26

English keyword(s) :

Electrical properties and parameters
Solar cells
Doping
Ultraviolet light
Quantum efficiency
MATLAB
Electron beam induced current
Semiconductor materials
Nanotubes
Short circuit

HAL domain(s) :

Sciences de l'ingénieur [physics]/Matériaux

English abstract : [en]

We study the influence of V-pits on the overall conversion efficiency of bulk In0.12 Ga0.88N based heterojunction solar cells grown by MOVPE. We show that V-pits significantly enhances the extraction of the photogenerated ...
Show more >We study the influence of V-pits on the overall conversion efficiency of bulk In0.12 Ga0.88N based heterojunction solar cells grown by MOVPE. We show that V-pits significantly enhances the extraction of the photogenerated carriers in the InGaN absorber, resulting in a peak external quantum efficiency of 79% and a short circuit current density (twice the state of the art) of 2.56 mA/cm−2 under AM 1.5G conditions.The author would like to thank Dr. A. Ramdane and S. Belahsene for device processing at LPN CNRS, Marcoussis, France. This study has been funded by the French National Research Agency (ANR) under the NOVAGAINS (ANR-12-PRGE-0014-02) ANR Project and GANEX Program (ANR-11-LABX-0014).Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Isite LUE

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2021-07-27T09:52:30Z