Title :

Demonstration of GaN-on-silicon material system operating up to 3 kilovolts with reduced trapping effects

Author(s) :

Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cheng, Kai [Auteur]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Conference title :

International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

City :

Minneapolis

Country :

Etats-Unis d'Amérique

Start date of the conference :

2019-04-29

Book title :

2019 CS MANTECH proceeding

English keyword(s) :

GaN power devices
trapping
high voltage

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The ...
Show more >We report on the first demonstration of low trapping effects up to 3000 V within GaN-on-silicon epitaxial layers using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. The fabricated AlGaN/GaN devices deliver low specific on-resistance below 10 mΩcm 2 together with unprecedented 3-terminal blocking voltage while substrate ramp measurements show reduced hysteresis up to 3000 V. These results pave the way for beyond 1200 V applications using large wafer diameter GaN-on-Si high electron mobility transistors.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL