Title :

Photoassisted tunneling from free-standing GaAs thin films into metallic surfaces

Author(s) :

Vu, D. [Auteur]
Arscott, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ramdani, R. [Auteur]
Gil, E. [Auteur]
Laboratoire des sciences et matériaux pour l'électronique et d'automatique [LASMEA]
André, Y. [Auteur]
Bansropun, S. [Auteur]
Thales Research and Technology [Palaiseau]
Gerard, B. [Auteur]
Rowe, A. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]
Paget, D. [Auteur]
Laboratoire de physique de la matière condensée [LPMC]

Journal title :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pages :

115331-1-12

Publisher :

American Physical Society

Publication date :

2010-09

ISSN :

1098-0121

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light ...
Show more >The tunnel photocurrent between a gold surface and a free-standing semiconducting thin film excited from the rear by above bandgap light has been measured as a function of applied bias, tunnel distance and excitation light power. The results are compared with the predictions of a model which includes the bias dependence of the tunnel barrier height and the bias-induced decrease of surface recombination velocity. It is found that i) the tunnel photocurrent from the conduction band dominates that from surface states. ii) At large tunnel distance the exponential bias dependence of the current is explained by that of the tunnel barrier height, while at small distance the change of surface recombination velocity is dominantShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL