Title :

Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts

Author(s) :

Han, X.-L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, Guilhem [Auteur]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cristiano, Fuccio [Auteur]
Équipe Matériaux et Procédés pour la Nanoélectronique [LAAS-MPN]

Journal title :

Surface Science : A Journal Devoted to the Physics and Chemistry of Interfaces

Pages :

836 - 839

Publisher :

Elsevier

Publication date :

2012-05

ISSN :

0039-6028

HAL domain(s) :

Physique [physics]
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

In this article, we investigate the silicide/Si nanowire (Si NW) interface properties based on a detailed characterization of PtSi/NW nanocontacts. For that purpose, we fabricate two-terminal structures implemented on ...
Show more >In this article, we investigate the silicide/Si nanowire (Si NW) interface properties based on a detailed characterization of PtSi/NW nanocontacts. For that purpose, we fabricate two-terminal structures implemented on vertical Si NWs arrays defined by a top-down approach with an ultra-high density. Each termination of Si NWs is silicided and contacted to an external metal line. The temperature dependence and the non-linearity of current-voltage (I-V) characteristics are identified as a clear signature indicating that contacts dominate the overall resistance of the Si NW arrays. It is demonstrated that this trend remains valid in the limit of extremely small NW radii and that trap-induced surface depletion also reduces the contact injection cross-section. In this context, the electrostatic landscape at the vicinity of the silicide-to-semiconductor contact interface is dominated by the field effect imposed by peripheral surface states and not by the Schottky barrier height.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL