Title :

Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene

Author(s) :

Li, Jing [Auteur]
Miranda, Henrique Pereira Coutada [Auteur]
Niquet, Yann-Michel [Auteur]
Genovese, Luigi [Auteur]
Duchemin, Ivan [Auteur]
Wirtz, Ludger [Auteur]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pages :

075414

Publisher :

American Physical Society

Publication date :

2015

ISSN :

1098-0121

English keyword(s) :

Raman-Spectroscopy
Transistors
Scattering
Transport
Graphite
Arrays

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical ...
Show more >Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from one to two dimensions by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, i. e., the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility depends strongly on chirality, diameter, and the existence of a band gap.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Modélisation de nanodispositifs pour des applications à faible consommation
Simulations quantiques et comparaison de nano-dispositifs

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL