Title :

Experimental Demonstration of gm/ID Based Noise Analysis

Author(s) :

Ou, Jack [Auteur]
Sonoma State University [Rohnert Park]
Maris Ferreira, Pietro [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Lee, Jui-Chu [Auteur]

Journal title :

Circuits and Systems

Pages :

69-75

Publication date :

2014-04-14

English keyword(s) :

gm/Id Design Methodology
Noise Analysis
Flicker Noise

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

Recent studies using BSIM3 models have suggested that noise depends on the transconductance- to-drain ratio (gmID) of a transistor. However, to the best of our knowledge, no experimental gmID result demonstrating gmID ...
Show more >Recent studies using BSIM3 models have suggested that noise depends on the transconductance- to-drain ratio (gmID) of a transistor. However, to the best of our knowledge, no experimental gmID result demonstrating gmID dependent noise previously observed in simulation is available in the literature. This paper examines the underlying principles that make it possible to analyze noise using gmID based noise analysis. Qualitative discussion of normalized noise is presented along with experimental results from a 130 nm CMOS process. A close examination of the experimental results reveals that the device noise is width independent from 1 Hz to 10 kHz. Moreover, noise increases as gmID is reduced. The experiment observation that noise is width independent makes it possible for circuit designers to generate normalized parameters that are used to study noise intuitively and accurately.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL