Characterization of Parasitic Resistances ...

Document type :
Article dans une revue scientifique
DOI :
10.1109/TMTT.2016.2549528
Title :
Characterization of Parasitic Resistances of AlN/GaN/AlGaN HEMTs Through TCAD-Based Device Simulations and On-Wafer Measurements
Author(s) :
Subramani, N. K. [Auteur]
Systèmes RF [XLIM-SRF]
Sahoo, A. K. [Auteur]
Systèmes RF [XLIM-SRF]
Nallatamby, Jean-Christophe [Auteur]
Systèmes RF [XLIM-SRF]
Sommet, R. [Auteur]
Systèmes RF [XLIM-SRF]
Rolland, N. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur] refId
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Quere, R. [Auteur]
Systèmes RF [XLIM-SRF]
Journal title :
IEEE Transactions on Microwave Theory and Techniques
Pages :
1351-1358
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2016-05
ISSN :
0018-9480
English keyword(s) :
III-V semiconductors
S-parameters
aluminium compounds
gallium compounds
high electron mobility transistors
silicon compounds
technology CAD (electronics)
2D physics-based numerical simulation
AlN-GaN-AlGaN
DC measurement
HEMT
SiC
TCAD-based device simulation
channel sheet resistance
chuck temperature
gate-source bias
high-electron mobility transistors
low-frequency S-parameter measurement
on-wafer measurement
parasitic resistance characterization
silicon carbide substrate
source-drain lengths
temperature-dependent on-resistance
temperature-dependent series contact resistance
two-dimensional physics-based numerical simulation
Aluminum gallium nitride
Gallium nitride
HEMTs
MODFETs
Semiconductor device measurement
Temperature measurement
Wide band gap semiconductors
Gallium-nitride (GaN)
high electron-mobility transistor (HEMT)
numerical simulation
on-resistance
sheet resistance
sheet resistance.
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
no abstract
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
Source :
Harvested from HAL