Title :

Investigation of the performance of HEMT based NO, NO2 and NH3 exhaust Gas Sensors for Automotive Antipollution Systems

Author(s) :

Halfaya, Yacine [Auteur]
PSA Peugeot Citroën
Georgia Tech Lorraine [Metz]
Bishop, Chris [Auteur]
School of Electrical and Computer Engineering
Georgia Tech Lorraine [Metz]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Suresh, Sundaram [Auteur]
Georgia Tech Lorraine [Metz]
Aubry, Vincent [Auteur]
PSA Peugeot Citroën
Voss, Paul L. [Auteur]
School of Electrical and Computer Engineering
Georgia Tech Lorraine [Metz]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Ougazzaden, Abdallah [Auteur]
School of Electrical and Computer Engineering
Georgia Tech Lorraine [Metz]

Journal title :

Sensors

Pages :

273

Publisher :

MDPI

Publication date :

2016

ISSN :

1424-8220

English keyword(s) :

AlGaN/GaN heterostructure
HEMT transistor
NOx and NH3
automotive exhaust line
gas sensor

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

English abstract : [en]

We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate ...
Show more >We report improved sensitivity to NO, NO2 and NH3 gas with specially-designed AlGaN/GaN high electron mobility transistors (HEMT) that are suitable for operation in the harsh environment of diesel exhaust systems. The gate of the HEMT device is functionalized using a Pt catalyst for gas detection. We found that the performance of the sensors is enhanced at a temperature of 600 °C, and the measured sensitivity to 900 ppm-NO, 900 ppm-NO2 and 15 ppm-NH3 is 24%, 38.5% and 33%, respectively, at 600 °C. We also report dynamic response times as fast as 1 s for these three gases. Together, these results indicate that HEMT sensors could be used in a harsh environment with the ability to control an anti-pollution system in real timeShow less >

Language :

Anglais

Popular science :

Non

ANR Project :

Isite LUE

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL