Title :

High Frequency Characterization and Compact Electrical Modelling of Graphene Field Effect Transistors

Author(s) :

Nakkala, Poornakarthik [Auteur]
C2S2 [XLIM-C2S2]
Martin, Audrey [Auteur]
C2S2 [XLIM-C2S2]
Campovecchio, Michel [Auteur correspondant]
C2S2 [XLIM-C2S2]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Khenissa, Mohamed Salah [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Belhaj, Mohamed Moez [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mele, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Colambo, Ivy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vignaud, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

44th European Microwave Conference

City :

Rome

Country :

Italie

Start date of the conference :

2014-10-05

Publication date :

2014-10

English keyword(s) :

Graphene
Current measurement
Logic gates
Field effect transistors
Frequency measurement
Solid modeling
Cutoff frequency

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V and microwave characterization of several Graphene Field-Effect Transistor (GFET) ...
Show more >This paper deals with both DC and high frequency characterization of graphene devices, associated to compact electrical modelling. Pulsed I-V and microwave characterization of several Graphene Field-Effect Transistor (GFET) generations fabricated on SiC substrates were investigated in order to derive a first approach for non-linear device modelling. As illustrated here with a Graphene Nano Ribbon FET (GNR FET), a compact electrical model was presented accounting the DC and HF characteristics in broad range of operating conditions. The differences between DC and pulsed I-V characterizations of the GNR FET are investigated and compared to simulations. The small signal behavior and some figure of merits (FOM) like current gain cut-off frequency ft maximum oscillation frequency fmax. The nonlinear modelling of GNR FET is becoming of prime importance along with technological efforts to demonstrate the actual potential of this promising technology. This approach was also applied to conventional GFET, with a large flake of graphene used as a device channel.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL