Title :

Millimeter-wave in situ tuner : an efficient solution to extract the noise parameters of SiGe HBTs in the whole 130-170 GHz range

Author(s) :

Deng, Marina [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Poulain, Laurent [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Quémerais, Thomas [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Chevalier, Pascal [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Lepilliet, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Danneville, Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Microwave and Wireless Components Letters

Pages :

649-651

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2014

ISSN :

1531-1309

English keyword(s) :

D-band
in situ tuner
millimeter wave
noise characterization
noise parameters extraction
noise power measurement
SiGe heterojunction bipolar transistors

English abstract : [en]

SiGe HBT noise parameters ( , and ) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner ...
Show more >SiGe HBT noise parameters ( , and ) are for the first time extracted in the entire 130 - 170 GHz frequency range. This achievement is realized using a D-band on-chip source-pull system, which includes an impedance tuner integrated with the transistor under test. On-wafer noise power measurements on this system were performed for each tuner impedance state, from which are extracted the transistor noise parameters in the complete -band.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL